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Número de pieza | MA3X199 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA3X199 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Switching Diodes
MA3X199
Silicon epitaxial planar type
For high voltage switching circuit
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• High breakdown voltage: VR = 200 V
• Short reverse recovery time trr
• Small package, allowing automatic mounting
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Repetitive peak forward current
Non-repetitive peak forward
surge current*
VR
VRRM
IF(AV)
IFRM
IFSM
200
250
100
225
500
Junction temperature
Storage temperature
Note) * : t = 1 s
Tj 150
Tstg −55 to +150
Unit
V
V
mA
mA
mA
°C
°C
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M3A
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
Ct
trr
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring circuit
Conditions
VR = 200 V
IF = 100 mA
VR = 0 V, f = 1 MHz
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Min Typ Max Unit
1 µA
1.2 V
3 pF
60 ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 1mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA3X199.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA3X198 | Silicon epitaxial planar type | Panasonic |
MA3X199 | Silicon epitaxial planar type | Panasonic |
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