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Número de pieza | MA3S781 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA3S781 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Diodes (SBD)
MA3S781
Silicon epitaxial planar type
For the switching circuit
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
• 1608 type diode contained in the (SS-mini) package
• Surface mounting, allowing high-density mounting
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
VR
VRM
IF
IFM
Tj
Tstg
30
30
30
150
125
−55 to +125
Unit
V
V
mA
mA
°C
°C
1
3
2
0.44 0.44
0.88
+
−
0.05
0.03
1 : Cathode
2 : NC
3 : Anode
SS-Mini Type Package (3-pin)
Marking Symbol: M1L
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
300
0.4
1
1.5
1.0
nA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA3S781.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA3S781 | Silicon epitaxial planar type | Panasonic |
MA3S781D | Silicon epitaxial planar type | Panasonic |
MA3S781E | Silicon epitaxial planar type (cathode common) | Panasonic |
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