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PDF MA3S132D Data sheet ( Hoja de datos )
| Número de pieza | MA3S132D | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Switching Diodes
MA3S132D
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
• Short reverse recovery time trr
• Small terminal capacitance, Ct
• Super-small SS-mini type package contained two elements, allow-
ing high-density mounting
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Single
Double
VR
VRM
IF
80
80
100
150
Peak forward
current
Single
Double
IFM
225
340
Non-repetitive peak Single
forward surge current* Double
IFSM
500
750
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA
mA
°C
°C
1
3
2
0.44 0.44
0.88
+
−
0.05
0.03
1 : Cathode 1
2 : Cathode 2
3 : Anode 1
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MO
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
Symbol
IR
VF
VR
Ct
trr
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
100
1.2
80
15
10
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
nA
V
V
pF
ns
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3S132D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| MA3S132D | Silicon epitaxial planar type | Panasonic |
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| MA3S132K | Silicon epitaxial planar type | Panasonic |
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