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PDF MA3J744 Data sheet ( Hoja de datos )
| Número de pieza | MA3J744 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3J744
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
Unit : mm
0.425
2.1 ± 0.1
1.25 ± 0.1
0.425
I Features
• Small S-mini type package allowing high-density mounting
• Allowing to rectify under (IF(AV) = 200 mA) condition
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Peak forward current
Non-repetitive peak forward
surge current*
VR
VRRM
IF(AV)
IFM
IFSM
30
30
200
300
1
V
V
mA
mA
A
Junction temperature
Tj 150 °C
Storage temperature
Tstg −55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
1 : Anode
2 : NC
3 : Cathode
EIAJ : SC-70
Flat S- Mini Type Package (3-pin)
Marking Symbol: M1M
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
Symbol
IR
VF
Ct
trr
Conditions
VR = 30 V
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
Min Typ Max Unit
50 µA
0.55 V
30 pF
3 ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3J744.PDF ] | |
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