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PDF MA3J700 Data sheet ( Hoja de datos )
| Número de pieza | MA3J700 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3J700
Silicon epitaxial planar type
For high-frequency rectification
I Features
• S-mini type 3-pin package
• Allowing to rectify under (IF(AV) = 500 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
Unit : mm
0.425
2.1 ± 0.1
1.25 ± 0.1
0.425
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
VR
VRRM
IF(AV)
40
40
500
V
V
mA
Non-repetitive peak forward
surge current*
IFSM
2
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1 : Anode
2 : NC
3 : Cathode
Flat S-Mini Type Package (3-pin)
Marking Symbol: M2W
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 35 V
VF IF = 500 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 0.1 · IR, RL = 100 Ω
100
0.55
60
5
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3J700.PDF ] | |
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