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PDF MA3G751 Data sheet ( Hoja de datos )
| Número de pieza | MA3G751 | |
| Descripción | Silicon epitaxial planar type (cathode common) | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MA3G751 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Schottky Barrier Diodes (SBD)
MA3G751, MA3G751A
Silicon epitaxial planar type (cathode common)
For switching power supply
15.0 ± 0.3
11.0 ± 0.2
Unit : mm
5.0 ± 0.2
3.2
I Features
• Forward current (average) IF(AV): 20 A type
• High reliability caused by sealed in the TOP-3F (Full-pack
package)
• Cathode common dual type
• Low forward rise voltage VF
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Repetitive peak
reverse voltage
MA3G751
MA3G751A
VRRM
40
45
Average forward current
IF(AV)
20
Non-repetitive peak forward
surge current*
IFSM
150
Junction temperature
Tj
Storage temperature
Tstg
Note) * : Half sine-wave: 10 ms/cycle
−40 to +125
−40 to +125
Unit
V
A
A
°C
°C
φ 3.2 ± 0.1
2.0 ± 0.2
2.0 ± 0.1
1.1 ± 0.1
0.6 ± 0.2
5.45 ± 0.3
10.9 ± 0.5
123
1 : Anode
2 : Cathode
(Common)
3 : Anode
TOP-3F (TOP-3 Full-Pack Package )
Marking Symbol
• MA3G751 : MA3G751
• MA3G751A : MA3G751A
Internal Connection
123
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA3G751
IR
MA3G751A
Forward voltage (DC)
Thermal resistance
VF
Rth(j-c)
Note) Rated input/output frequency: 100 MHz
VR = 40 V
VR = 45 V
IF = 10 A
Direct current (between junction and case)
5 mA
5
0.55 V
1.5 °C/W
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3G751.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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