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PDF MA3075WALT1D Data sheet ( Hoja de datos )

Número de pieza MA3075WALT1D
Descripción Zener Transient Voltage Suppressor
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MA3075WALT1
Preferred Device
Zener Transient Voltage
Suppressor
SOT–23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Specification Features:
SOT–23 Package Allows Two Separate Unidirectional
Configurations
Low Leakage < 1 mA @ 5 Volt
Breakdown Voltage: 7.2–7.9 Volt @ 5 mA
Low Capacitance (80 pF typical @ 0 Volts, 1 MHz)
ESD Protection Meeting: 16 kV Human Body Model
ESD Protection Meeting: 30 kV Air and Contact Discharge
Mechanical Characteristics:
Void Free, Transfer–Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Peak Power Dissipation @ 100 µs
(Note 1)
Ppk
15
Steady State Power Dissipation
Derate above 25°C
(Note 2)
°PD°
225
1.8
Thermal Resistance
Junction to Ambient
RθJA
556
Maximum Junction Temperature
Operating Junction and Storage
Temperature Range
RθJA
TJ, Tstg
417
– 55 to +150
ESD Discharge
MIL STD 883C – Method 3015–6
IEC61000–4–2, Air Discharge
IEC61000–4–2, Contact Discharge
VPP
1. Non–repetitive 100 ms pulse width
2. Mounted on FR–5 Board = 1.0 X 0.75 X 0.062 in.
16
30
30
Unit
Watts
°mW°
mW/°C
°C/W
°C/W
°C
kV
http://onsemi.com
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
2
3
3
1
2
SOT–23
CASE 318
STYLE 12
MARKING
DIAGRAM
7W5
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MA3075WALT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 1
1
Publication Order Number:
MA3075WALT1/D

1 page




MA3075WALT1D pdf
MA3075WALT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD = 150°C – 25°C = 225 milliwatts
556°C/W
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
http://onsemi.com
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