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PDF MA2YD15 Data sheet ( Hoja de datos )

Número de pieza MA2YD15
Descripción Schottky Barrier Diodes (SBD)
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA2YD15 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA2YD15
Silicon epitaxial planar type
For high frequency rectification
I Features
IF(AV) = 1 A rectification is possible
Low forward voltage VF
Small reverse current IR
Mini type 2-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse-voltage
Average forward current *1
Non-repetitive peak forward-
surge-current *2
VR
VRRM
IF(AV)
IFSM
20
25
1
3
V
V
A
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg 55 to +125
°C
Note) *1: Mounted on a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.6±0.1
1
Unit: mm
0.80±0.05
0 to 0.1
2 0.45±0.1
0.55±0.1
5°
0.16+–00..016
1 : Anode
2 : Cathode
Marking Symbol: 2R
Mini2-F1 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR VR = 20 V
VF IF = 1 A
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
100
0.45
120
10
µA
V
pF
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. *: trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: August 2001
SKH00031AED
1

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