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PDF MA2X707 Data sheet ( Hoja de datos )

Número de pieza MA2X707
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
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No Preview Available ! MA2X707 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA2X707
Silicon epitaxial planar type
For UHF mixer
I Features
Small forward voltage VF
Optimum for UHF mixer because of its large conversion gain
(GC)
Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Forward voltage
Junction temperature
Storage temperature
VR 5
VF 0.5
Tj 125
Tstg 55 to +125
Unit
V
V
°C
°C
INDICATES
CATHODE
1
Unit : mm
2
2.7
+
0.2
0.1
3.3 ± 0.2
*(3.8 ± 0.2)
5°
5°
*( ): WL type
1 : Anode
2 : Cathode
Mini Type Package (2-pin)
Marking Symbol: 5B
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward current (DC)
Reverse current (DC)
Forward voltage (DC)
Reverse break down voltage (DC)
Terminal capacitance
Conversion gain*1,2
IF
IR
VF
V(BR)R
Ct
GC
VF = 0.5 V
35 100
VR = 5 V
35
IF = 2 mA
0.25
IR = 1 mA
5
VR = 0.5 V, f = 1 MHz
0.65 0.85 1.05
RF = 890 MHz, LO = 935 MHz, IF = 45 MHz 7
5
mA
µA
V
V
pF
dB
Static breakdown strength
C = 100 pF, Breakdown judgment
point IR 35 µA
100 200
V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Noise figure is 8.5 dB.
3. Rated input/output frequency: 935 MHz
4. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed.
*2 : Set min. GC = 7 dB. Out-spec products, if any, this specification would be reviewed
1

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