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Número de pieza | MA2SD10 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA2SD10 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Diodes (SBD)
MA2SD10
Silicon epitaxial planar type
For super-high speed switching circuit
Unit : mm
0.80 0.80 ± 0.05
I Features
• Sealed in the super small SS-mini type 2-pin package
• Allowing to rectify under (IF(AV) = 200 mA) condition
• Low forward rise voltage VF
• Allowing high-density mounting
21
0.60 0.60
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Non-repetitive peak forward
surge current*
VR
VRRM
IFSM
20
20
1
V
V
A
Peak forward current
IFM 300 mA
Average forward current
IF(AV)
200
mA
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125 °C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
+ 0.05
1.20 − 0.03
1.60 ± 0.05
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: 2L
Internal Connection
21
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR VR = 10 V
VF1 IF = 5 mA
VF2 IF = 200 mA
Ct VR = 0 V, f = 1 MHz
20
0.27
0.47
40
µA
V
V
pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of
a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA2SD10.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA2SD10 | Silicon epitaxial planar type | Panasonic |
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