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PDF MA2S728 Data sheet ( Hoja de datos )

Número de pieza MA2S728
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA2S728 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA2S728
Silicon epitaxial planar type
For switching circuits
Unit : mm
I Features
Super-small SS-mini type 2-pin package
Allowing high-density mounting
Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
Small temperature coefficient of forward characteristic
Extremely low reverse current IR
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
VRM
IFM
IF
Tj
Tstg
30
30
150
30
125
55 to +125
Unit
V
V
mA
mA
°C
°C
21
+ 0.05
1.20 0.03
1.60 ± 0.05
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: B
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
300
0.4
1
1.5
1
nA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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