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PDF MA2J704 Data sheet ( Hoja de datos )

Número de pieza MA2J704
Descripción Schottky Barrier Diodes (SBD)
Fabricantes Panasonic 
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No Preview Available ! MA2J704 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA2J704
Silicon epitaxial planar type
For super-high speed switching circuit
Unit : mm
KA
I Features
S-mini type 2-pin package
Allowing to rectify under (IF(AV) = 200 mA) condition
Low IR(reverse current) type. (About 1/10 of IR of the ordinary
products)
21
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
Non-repetitive peak forward
surge current*
VR
VRRM
IFM
IF(AV)
IFSM
20
20
300
200
1
V
V
mA
mA
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg 55 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2S
Internal Connection
21
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR1 VR = 10 V
IR2 VR = 20 V
VF IF = 200 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 0.1 · IR, RL = 100
2
5
0.55
30
3.0
µA
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
1

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