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Número de pieza | MA27111 | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA27111 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Switching Diodes
MA27111
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• High-density mounting is possible
• Short reverse recovery time trr
• Small terminal capacitance Ct
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current *
VR
VRM
IF
IFM
IFSM
80
80
100
225
500
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) *: t = 1 s
Unit
V
V
mA
mA
mA
°C
°C
0.27+–00..0025
2
Unit: mm
0.13+–00..0025
1
0.60±0.05
5°
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: S
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF IF = 100 mA
VR IR = 100 µA
IR VR = 75 V
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
0.95 1.20
80
100
0.6 2.0
3
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: trr measurement circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Publication date: November 2003
SKF00066BED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MA27111.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA27111 | Silicon epitaxial planar type | Panasonic |
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