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PDF MA22D28 Data sheet ( Hoja de datos )

Número de pieza MA22D28
Descripción Schottky Barrier Diodes (SBD)
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA22D28 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA22D28
Silicon epitaxial planar type
For high speed switching
Features
Forward current IF(AV) = 1.5 A rectification is possible
Low forward voltage VF
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average) *1
Non-repetitive peak forward
surge current *2
VR
VRRM
IF(AV)
IFSM
30
30
1.5
30
V
V
A
A
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
°C
°C
Note) *1: Mounted on a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.6±0.1
1
0.80±0.05
Unit: mm
0 to 0.1
2
0.55±0.1
0.45±0.1
0.16+–00..016
Marking Symbol: 3Z
1: Anode
2: Cathode
Mini2-F1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 0.5 A
0.34 0.38
V
VF2 IF = 1.0 A
0.38 0.42
VF3 IF = 1.5 A
0.42 0.46
Reverse current
IR VR = 30 V
100 µA
Terminal capacitance
Reverse recovery time *
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA , RL = 100
50 pF
13 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. *: trr measuring instrument
Pulse Generator
(PG-10N)
Rs = 50
Bias Application Unit (N-50BU)
A
Wave Form
Analyzer
(SAS-8130)
Ri = 50
VR
Input Pulse
tr tp
10%
t
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: October 2003
SKH00126AED
1

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