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Número de pieza | M68701M | |
Descripción | Silicon MOS FET Power Amplifier / 860-915MHz 6W FM /Digital Mobile | |
Fabricantes | Mitsubishi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de M68701M (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELETROSTATIC
SENSITIVE
DEVICES
O U T L IN E D R A W IN G
60.5 +/-1
57.5 +/-0.5
50.2+/-1
+0.2
2-R1.6
0
12
phai 0.45
+/-0.2
8.3 +/-1
21.3 +/-1
43.3 +/-1
51.3 +/-1
3
MITSUBISHI RF POWER MODULE
M68701M
Silicon MOS FET Power Amplifier, 860-915MHz 6W FM /Digital Mobile
D im e n s i o n s i n m m
B L O C K D IAGRAM
23
45
1
PIN:
1 P in : R F IN P U T
2 VGG : GATE BIAS SUPPLY
3 V D D : D R A IN B I A S S U P P L Y
4 PO : RF OUTPUT
5 G N D : FIN
4
5
H11
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDD
SUPPLY VOLTAGE
VGG<5V,ZG=ZL=50 ohms
VGG
GATE BIAS VOLTAGE
Pin INPUT POWER
f=860-915MHz,ZG=ZL=50 ohms
Po OUTPUT POWER
f=860-915MHz,ZG=ZL=50 ohms
Tc(OP)
OPERATION CASE TEMPERATURE f=860-915MHz,ZG=ZL=50 ohms
Tstg STORAGE TEMPERATURE
Note:Above parameters are guaranteed independently.
RATINGS
17
5.5
10
10
-30 to +100
-40 to +110
UNIT
V
V
mW
W
deg. C
deg. C
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
f
Po
Efficiency
2fo
VSWR in
-
FREQUENCY RANGE
OUTPUT POWER
TOTAL EFFICIENCY
2nd HARMONIC
INPUT VSWR
LOAD VSWR
TOLERANCE
(Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED)
TEST CONDITIONS
LIMITS
MIN MAX
860 915
VDD=12.5V,VGG=5V,Pin=1mW
6
VDD=12.5V,
35
Pout=6W (VGG adjust)
-30
Pin=1mW
4
VDD=15.2V,Pin=1mW,Po=6W(VGG adjust)
ZG=50 ohms, LOAD VSWR=20:1
No degradation
or destroy
UNIT
MHz
W
%
dBc
-
-
ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-
flammable material or (iii) prevention against any malfunction or mishap.
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet M68701M.PDF ] |
Número de pieza | Descripción | Fabricantes |
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M68701M | Silicon MOS FET Power Amplifier / 860-915MHz 6W FM /Digital Mobile | Mitsubishi |
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