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Número de pieza | M68701H | |
Descripción | Silicon MOS FET Power Amplifier / 890-960MHz 6W FM /Digital Mobile | |
Fabricantes | Mitsubishi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de M68701H (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELETROSTATIC
SENSITIVE
DEVICES
O U T L IN E D R A W IN G
60.5 +/-1
57.5 +/-0.5
50.2+/-1
+0.2
2-R1.6
0
12
3
phai 0.45
+/-0.2
8.3 +/-1
21.3 +/-1
43.3 +/-1
51.3 +/-1
MITSUBISHI RF POWER MODULE
M68701H
Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile
D im e n s i o n s i n m m
B L O C K D IAGRAM
23
45
1
PIN:
1 P in : R F I N P U T
2 V G G : G A T E B IA S S U P P L Y
3 V D D : D R A IN B I A S S U P P L Y
4 PO : RF OUTPUT
5 G N D : FIN
4
5
H11
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDD
SUPPLY VOLTAGE
VGG<5V,ZG=ZL=50 ohms
VGG
GATE BIAS VOLTAGE
Pin INPUT POWER
f=890-960MHz,ZG=ZL=50 ohms
Po OUTPUT POWER
f=890-960MHz,ZG=ZL=50 ohms
Tc(OP)
OPERATION CASE TEMPERATURE f=890-960MHz,ZG=ZL=50 ohms
Tstg STORAGE TEMPERATURE
Note:Above parameters are guaranteed independently.
RATINGS
17
5.5
10
10
-30 to +100
-40 to +110
UNIT
V
V
mW
W
deg. C
deg. C
ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN MAX
f FREQUENCY RANGE
890 960
Po OUTPUT POWER
VDD=12.5V,VGG=5V,Pin=1mW
6
Efficiency TOTAL EFFICIENCY
VDD=12.5V,
35
2fo 2nd HARMONIC
Pout=6W (VGG adjust)
-30
VSWR in INPUT VSWR
Pin=1mW
4
- LOAD VSWR
VDD=15.2V,Pin=1mW,Po=6W(VGG adjust)
No degradation
TOLERANCE
ZG=50 ohms, LOAD VSWR=20:1
or destroy
ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .
UNIT
MHz
W
%
dBc
-
-
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-
flammable material or (iii) prevention against any malfunction or mishap.
(1/3)
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet M68701H.PDF ] |
Número de pieza | Descripción | Fabricantes |
M68701 | SILICON MOS FET POWER AMPLIFIER / 820-851MHz / 6W / FM PORTABLE RADIO | Mitsubishi |
M68701H | Silicon MOS FET Power Amplifier / 890-960MHz 6W FM /Digital Mobile | Mitsubishi |
M68701M | Silicon MOS FET Power Amplifier / 860-915MHz 6W FM /Digital Mobile | Mitsubishi |
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