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PDF M5M5W816WG-10LI Data sheet ( Hoja de datos )

Número de pieza M5M5W816WG-10LI
Descripción 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Fabricantes Mitsubishi 
Logotipo Mitsubishi Logotipo



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No Preview Available ! M5M5W816WG-10LI Hoja de datos, Descripción, Manual

1999.1.15 Ver. 0.1
MITSUBISHI LSIs
M5M5W816WG -85L, 10L, 85H, 10H
-85LI, 10LI, 85HI, 10HI
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Those are summarized in the part name table below.
DESCRIPTION
The M5M5W816 is a family of low voltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.18µm CMOS technology.
The M5M5W816 is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5W816WG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It gives the best solution for a compaction
of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
From the point of operating temperature, the family is divided
into two versions; "Standard" and "I-version".
FEATURES
- Single 1.8~2.7V power supply
- Small stand-by current: 0.1µA (2.7V, typ.)
- No clocks, No refresh
- Data retention supply voltage =1.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1, S2, BC1 and BC2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prevents data contention in the I/O bus
- Process technology: 0.18µm CMOS
- Package: 48ball 7.0mm x 8.5mm CSP
Version,
Operating
temperature
Standard
0 ~ +70°C
I-version
-40 ~ +85°C
Part name
M5M5W816WG -85L
M5M5W816WG -10L
M5M5W816WG -85H
M5M5W816WG -10H
M5M5W816WG -85LI
M5M5W816WG -10LI
M5M5W816WG -85HI
M5M5W816WG -10HI
Power
Supply
1.8 ~ 2.7V
1.8 ~ 2.7V
1.8 ~ 2.7V
1.8 ~ 2.7V
PIN CONFIGURATION
(TOP VIEW)
Access time
max.
85ns
100ns
85ns
100ns
85ns
100ns
85ns
100ns
Stand-by current (Vcc=2.7V)
* Typical
Ratings (max.)
25°C 40°C 25°C 40°C 70°C 85°C
0.1 0.2 --- --- 16 ---
0.1 0.2 1 2 8 ---
0.1 0.2 --- --- 16 30
0.1 0.2 1 2 8 15
Active
current
Icc1
(2.7V, typ.)
40mA
(10MHz)
5mA
(1MHz)
* Typical parameter indicates the value for the center
of distribution, and not 100% tested.
1 23 456
A BC1 OE A0 A1 A2 S2
B DQ9 BC2 A3 A4 S1 DQ1
C DQ10 DQ11 A5
A6 DQ2 DQ3
D GND DQ12 A17 A7 DQ4 VCC
E VCC DQ13 GND A16 DQ5 GND
F DQ15 DQ14 A14 A15 DQ6 DQ7
G DQ16 N.C. A12 A13
W DQ8
H A18 A8 A9 A10 A11 N.C.
Outline: 48FHA
NC: No Connection
Pin Function
A0 ~ A18 Address input
DQ1 ~ DQ16 Data input / output
S1 Chip select input 1
S2 Chip select input 2
W Write control input
OE Output enable input
BC1 Lower Byte (DQ1 ~ 8)
BC2 Upper Byte (DQ9 ~ 16)
Vcc Power supply
GND Ground supply
MITSUBISHI ELECTRIC
1

1 page




M5M5W816WG-10LI pdf
1999.1.15 Ver. 0.1
M5M5W816WG -85L, 10L, 85H, 10H
-85LI, 10LI, 85HI, 10HI
MITSUBISHI LSIs
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
(4)TIMING DIAGRAMS
Read cycle
A0~18
tCR
ta(A)
tv (A)
BC1,BC2
(Note3)
ta(BC1) or ta(BC2)
tdis (BC1) or tdis (BC1)
(Note3)
S1
(Note3)
ta(S1)
tdis (S1)
(Note3)
S2
(Note3)
OE
W = "H" level
(Note3)
DQ1~16
Write cycle ( W control mode )
ta(S2)
ta (OE)
ten (OE)
ten (BC1)
ten (BC2)
ten (S1)
ten (S2)
tCW
tdis (S2)
tdis (OE)
VALID DATA
(Note3)
(Note3)
A0~18
BC1,BC2
S1
S2
(Note3)
(Note3)
(Note3)
tsu (BC1) or tsu(BC2)
tsu (S1)
tsu (S2)
(Note3)
(Note3)
(Note3)
OE
W
DQ1~16
tsu (A)
tdis(OE)
tsu (A-WH)
tw (W)
tdis (W)
DATA IN
STABLE
tsu (D) th (D)
trec (W)
ten(OE)
ten (W)
MITSUBISHI ELECTRIC
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