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PDF M5M5W816TP-85HI Data sheet ( Hoja de datos )
| Número de pieza | M5M5W816TP-85HI | |
| Descripción | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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2001.4.11 Ver. 2.0
M5M5W816TP-70HI, 85HI
MITSUBISHI LSIs
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Those are summarized in the part name table below.
DESCRIPTION
FEATURES
The M5M5W816TP is a f amily of low v oltage 8-Mbit static
RAMs organized as 524288-words by 16-bit, f abricated by
Mitsubishi's high-perf ormance 0.18µm CMOS technology .
The M5M5W816TP is suitable f or memory applications
where a simple interf acing , battery operating and battery
backup are the important design objectiv es.
The M5M5W816TP is packaged in a 44pin thin small
outline mount dev ice, with the outline of 400mil TSOP
TY PE(II). It giv es the best solution f or a compaction of
mounting area as well as f lexibility of wiring pattern of
printed circuit boards.
The operating temperature range is -40~+85°C
- Single 2.7~3.0V power supply
- Small stand-by current: 0.2µA (3.0V, ty p.)
- No clocks, No ref resh
- Data retention supply v oltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S#, BC1# and BC2#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE# prev ents data contention in the I/O bus
- Process technology : 0.18µm CMOS
- Package: 44pin 400mil TSOP TYPE(II)
Version,
Operating
temperature
I-version
-40~+85°C
Part name
M5M5W816TP -70HI
M5M5W816TP -85HI
Power
Supply
2.7~3.0V
Access time
max.
Stand-by c urrent
* Ty pical
Ratings (max.)
25°C 40°C 25°C 40°C 70°C 85°C
70ns
85ns
0.5 1.0 2 4 20 40
Activ e
current
Icc1
*(ty p.)
40mA
(10MHz)
5mA
(1MHz)
* Typical parameter indicates the value for the
center of distribution, and not 100% tested.
PIN CONFIGURATION
A4
A3
A2
A1
A0
S#
DQ1
DQ2
DQ3
DQ4
VCC
GND
DQ5
DQ6
DQ7
DQ8
W#
A15
A14
A13
A12
A16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A5
43 A6
42 A7
41 OE#
40 BC2#
39 BC1#
38 DQ16
37 DQ15
36 DQ14
35 DQ13
34 GND
33 VCC
32 DQ12
31 DQ11
30 DQ10
29 DQ9
28 A18
27 A8
26 A9
25 A10
24 A11
23 A17
44Pin 400mil TSOP
Outline: 44P3W
NC: No Connection
Pin Function
A0 ~ A18 Address input
DQ1 ~ DQ16 Data input / output
S#
W#
OE#
Chip select input
Write control input
Output enable input
BC1#
BC2#
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Vcc Power supply
GND Ground supply
MITSUBISHI ELECTRIC
1
1 page  
2001.4.11 Ver. 2.0
M5M5W816TP-70HI, 85HI
MITSUBISHI LSIs
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
(4)TIMING DIAGRAMS
Read cycle
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
tCR
A 0~18
ta(A)
tv (A)
BC1#,BC2#
(Note3)
ta(BC1) or ta(BC2)
tdis (BC1) or tdis (BC2)
(Note3)
S#
(Note3)
ta(S)
tdis (S)
(Note3)
OE#
W# = "H" lev el
DQ1~16
(Note3)
ta (OE)
ten (OE)
ten (BC1)
ten (BC2)
ten (S)
tdis (OE)
VALID DATA
(Note3)
Write cycle ( W# control mode )
tCW
A 0~18
BC1#,BC2#
S#
(Note3)
(Note3)
tsu (BC1) or tsu(BC2)
tsu (S)
OE#
W#
DQ1~16
tsu (A)
tsu (A-WH)
tw (W)
tdis (W)
tdis(OE)
DATA IN
STABLE
tsu (D) th (D)
trec (W)
ten(OE)
ten (W)
(Note3)
(Note3)
MITSUBISHI ELECTRIC
5
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