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PDF M5M512R88DJ-10 Data sheet ( Hoja de datos )

Número de pieza M5M512R88DJ-10
Descripción 1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM
Fabricantes Mitsubishi 
Logotipo Mitsubishi Logotipo



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No Preview Available ! M5M512R88DJ-10 Hoja de datos, Descripción, Manual

1998.6.18 Ver.A
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
MITSUBISHI LSIs
M5M512R88DJ-10,-12,-15
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M512R88DJ is a family of 131072-word by 8-bit PIN CONFIGURATION (TOP VIEW)
static RAMs, fabricated with the high performance CMOS
silicon gate process and designed for high sapdederdess
application.
inputs
A0 1
A1 2
A2 3
These devices operate on a single 3.3V supply, and are chip select
directly TTL compatible. They include a power down
input
data inputs/
feature as well.
outputs
A3
S
DQ1
DQ2
4
5
6
7
FEATURES
•Fast access time
M5M512R88DJ-10 ... 10ns(max)
M5M512R88DJ-12 ... 12ns(max)
(3.3V) VCC 8
(0V)
data
inputs/
GND
DQ3
9
10
outputs DQ4 11
M5M512R88DJ-15 ... 15ns(max)
write control W 12
•Low power dissipation Active .................... 297mW(typ) input
A4 13
•Single +3.3V power supply
•Fully static operation : No clocks, No refresh
•Common data I/O
address
inputs
A5 14
A6 15
A7 16
•Easy memory expansion by S
•Three-state outputs : OR-tie capability
Outline
•OE prevents data contention in the I/O bus
•Directly TTL compatible : All inputs and outputs
32P0K
32 A16
3a1ddAr1e5ss
30 A14 inputs
29 A13 output enable
28 OE input
27 DQ8
26 DQ7
data
inputs/
outputs
25 GND (0V)
24 VCC (3.3V)
23 DQ6
22 DQ5
data
inputs/
outputs
21 A12
20 A11
1a9 dAdr1e0ss
18 A9
inputs
17 A8
APPLICATION
High-speed memory units
PACKAGE
M5M512R88DJ : 32pin 400mil SOJ
BLOCK DIAGRAM
address
inputs
A0 1
A1 2
A2 3
A3 4
A4 13
A5 14
A6 15
A7 16
A8 17
S5
W 12
OE 28
MEMORY ARRAY
512 ROWS
2048 COLUMNS
COLUMN I/O CIRCUITS
CCOOLLUUMMNNADDRESS
ADDDREECSOSDERS
DECODERS
COLUMN INPUT BUFFERS
6 DQ1
7 DQ2
10 DQ3
11 DQ4
22 DQ5
23 DQ6
26 DQ7
27 DQ8
data
inputs/
outputs
8 VCC(3.3V)
24
9
GND(0V)
25
18 19 20 21 29 30 31 32
A9 A10 A11 A12 A13 A14 A15 A16
address
inputs
MITSUBISHI
ELECTRIC
1

1 page




M5M512R88DJ-10 pdf
MITSUBISHI LSIs
M5M512R88DJ-10,-12,-15
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM
(4)TIMING DIAGRAMS
Read cycle 1
A 0~16
VIH
VIL
DQ1~8 VOH
VOL
tv(A)
PREVIOUS DATA VALID
W=H
S=L
OE=L
t CR
ta(A)
UNKNOWN
tv(A)
DATA VALID
Read cycle 2 (Note 3)
VIH
S VIL
t CR
ta(S)
(Note 4)
ten(S)
(Note 4)
tdis(S)
DQ1~8
VOH
VOL
ICC1
Icc
ICC2
UNKNOWN
tPU
50%
DATA VALID
tPD
50%
W=H
OE=L
Note 3. Addresses valid prior to or coincident with S transition low.
4. Transition is measured ±500mv from steady state voltage with specified loading in Figure 2.
Read cycle 3 (Note 5)
VIH
OE VIL
t CR
ta(OE)
(Note 4)
tdis(OE)
(Note 4) ten(OE)
DQ1~8
VOH
VOL
W=H
S=L
UNKNOWN
DATA VALID
Note 5. Addresses and S valid prior to OE transition low by (ta(A)-ta(OE)), (ta(S)-ta(OE))
MITSUBISHI
ELECTRIC
5

5 Page










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