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PDF M5M29GB Data sheet ( Hoja de datos )
| Número de pieza | M5M29GB | |
| Descripción | 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for
mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball
pitch) .
FEATURES
Organization
.................................1048,576 word x 16bit
(M5M29GB/T161BWG)
Supply voltage ...................................... VCC = 2.7~3.6V
Access time
.............................. 90ns (Max.)
Power Dissipation
R(PArefoategdrraAmu/tEormaasetic..P..o..w..e..r...s...a....v..i..n....g...)...................................1025.6343mmµWWW
(Max. at
(typ.)
(Max.)
5MHz)
Standby
Deep power
down
.................................
mode .......................
0.33µW
0.33µW
(typ.)
(typ.)
Auto program for Bank(I)
Program Time .................................4ms (typ.)
Program Unit
(Byte Program) .........................1word
(Page Program) .........................128word
Auto program for Bank(II)
Program Time
Program Unit
.................................
.................................
4ms (typ.)
128word
Auto Erase
Erase time
................................. 40 ms (typ.)
Erase Unit
Bank(I)
PBaoroatmBeltoecrkBlo.c..k................................
16Kword
16Kword
x
x
1
7
Bank(II) Main Block ......................32Kword x 28
Program/Erase cycles .........................................100Kcycles
Boot Block
M5M29GB161BWG ........................ Bottom Boot
M5M29GT161BWG ........................ Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Package
7mm x 8.5mm CSP (Chip Scale Package)
- 6 x 8 balls, 0.75mm ball pitch
APPLICATION
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine
PIN CONFIGURATION (TOP VIEW)
8.5mm
6 A13 A11 A8 WP2# WP1# A19 A7 A4
5 A14 A10 WE# RP# A18 A17 A5 A2
4 A15 A12 A9 NC NC A6 A3 A1
3 A16 D14 D5 D11 D2 D8 CE# A0
2 NC D15 D6 D12 D3 D9
D0 GND
1 GND D7 D13 D4 VCC D10 D1 OE#
INDEX
AB CD EFG H
M5M29GB/T161BWG
CSP(0.75mm ball pitch):48FJA
16-bit version NC : NO CONNECTION
1
Sep.1999. Rev4.0
1 page  
MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Mitsubishi 16M Flash Memory Type name
M 5 M 29G T 160B WG
Operating Voltage :
29G : 2.7 - 3.6V
Standard / BGO Type
29W : 1.65 - 2.2V
Standard / BGO Type
Boot Block :
T : Top Boot
B : Bottom Boot
Density/Write Protect/
Word Organizetion:
160B : 16M WP1#, x8/x16
161B : 16M WP1# & WP2#, x16
Package :
VP : 48pin TSOP(I) 12mm x 20mm (Nomal Pinout)
WG: CSP Ball Pitch 0.75mm,6x8 array, 7mm x 8.5mm
5 Sep.1999. Rev4.0
5 Page 
MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
AC ELECTRICAL CHARACTERISTICS (Ta = -40 ~85°C, Vcc = 2.7V ~3.6V)
Read-Only Mode
Symbol
Parameter
tRC
ta (AD)
ta (CE)
ta (OE)
tCLZ
tDF(CE)
tOLZ
tDF(OE)
tPHZ
tOH
tPS
tAVAV
tAVQV
tELQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tPLQZ
tOH
tPHEL
Read cycle time
Address access time
Chip enable access time
Output enable access time
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
RP# low to output high-Z
Output hold from CE#, OE#, addresses
RP# recovery to CE# low
Limits
Vcc=2.7-3.6V
90ns
Min Typ
90
0
0
0
150
Timing measurements are made under AC waveforms for read operations.
Max
90
90
30
25
25
150
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC ELECTRICAL CHARACTERISTICS (Ta = -40 ~85°C, Vcc = 2.7V ~3.6V)
Write Mode (WE# control)
Symbol
Parameter
tWC tAVAV Write cycle time
tAS tAVWH Address set-up time
tAH tWHAX Address hold time
tDS tDVWH Data set-up time
tDH tWHDX Data hold time
tOEH tWHGL OE# hold from WE# high
tRE -
Latency between Read and Write FFH or 71H
tCS tELWL Chip enable set-up time
tCH tWHEH Chip enable hold time
tWP tWLWH Write pulse width
tWPH tWHWL Write pulse width high
tGHWL tGHWL OE# hold to WE# Low
tBLS tPHHWH Block Lock set-up to write enable high
tBLH tQVPH Block Lockhold from valid SRD
tDAP tWHRH1 Duration of auto-program operation
tDAE tWHRH2 Duration of auto-block erase operation
tWHRL tWHRL Write enable high to F-RY/BY# low
tPS tPHWL RP# high recovery to write enable low
Limits
Vcc=2.7-3.6V
90ns
Min Typ
90
50
0
50
0
10
30
0
0
60
30
0
90
0
4
40
150
Max
80
600
90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at Vcc=3.3V, Ta=25°C
11 Sep.1999. Rev4.0
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet M5M29GB.PDF ] | |
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