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PDF M29W017D Data sheet ( Hoja de datos )
| Número de pieza | M29W017D | |
| Descripción | 16 Mbit 2Mb x8 / Uniform Block 3V Supply Flash Memory | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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M29W017D
16 Mbit (2Mb x8, Uniform Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and
Read
s ACCESS TIME: 70, 90ns
s PROGRAMMING TIME
– 10µs per Byte typical
s 32 UNIFORM 64 KByte MEMORY BLOCKS
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
– 64 bit Security Code
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: C8h
Figure 1. Packages
TSOP40 (N)
10 x 20mm
FBGA
TFBGA48 (ZA)
6 x 8 ball array
April 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/36
1 page  
M29W017D
SUMMARY DESCRIPTION
The M29W017D is a 16 Mbit (2Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage (2.7 to 3.6V) supply. On
power-up the memory defaults to its Read mode
where it can be read in the same way as a ROM or
EPROM.
The memory is divided into 32 blocks of 64KBytes
(see Table 16, Block Addresses) that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP40 (10 x 20mm) and
TFBGA48 (0.8mm pitch) packages. The memory is
supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
VCC
21
A0-A20
8
DQ0-DQ7
W
E M29W017D
G RB
RP
VSS
AI04186
Table 1. Signal Names
A0-A20
Address Inputs
DQ0-DQ7 Data Inputs/Outputs
E Chip Enable
G Output Enable
W Write Enable
RP Reset/Block Temporary Unprotect
RB Ready/Busy Output
VCC Supply Voltage
VSS Ground
NC Not Connected Internally
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5 Page 
M29W017D
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The long command sequences
are imposed to maximize data security.
Refer to Table 3, Commands, in conjunction with
the following text descriptions.
Read/Reset Command. The Read/Reset com-
mand returns the memory to its Read mode where
it behaves like a ROM or EPROM, unless other-
wise stated. It also resets the errors in the Status
Register. Either one or three Bus Write operations
can be used to issue the Read/Reset command.
The Read/Reset Command can be issued, be-
tween Bus Write cycles before the start of a pro-
gram or erase operation, to return the device to
read mode. Once the program or erase operation
has started the Read/Reset command is no longer
accepted. The Read/Reset command will not
abort an Erase operation when issued while in
Erase Suspend.
Auto Select Command. The Auto Select com-
mand is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are re-
quired to issue the Auto Select command. Once
the Auto Select command is issued the memory
remains in Auto Select mode until a Read/Reset
command is issued. Read CFI Query and Read/
Reset commands are accepted in Auto Select
mode, all other commands are ignored.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits
may be set to either VIL or VIH. The Manufacturer
Code for STMicroelectronics is 20h.
The Device Code can be read using a Bus Read
operation with A0 = VIH and A1 = VIL. The other
address bits may be set to either VIL or VIH. The
Device Code for the M29W017D is C8h.
The Block Protection Status of each block can be
read using a Bus Read operation with A0 = VIL,
A1 = VIH, and A16-A20 specifying the address of
the block. The other address bits may be set to ei-
ther VIL or VIH. If the addressed block is protected
then 01h is output on Data Inputs/Outputs DQ0-
DQ7, otherwise 00h is output.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. The command re-
quires four Bus Write operations, the final write op-
eration latches the address and data in the internal
state machine and starts the Program/Erase Con-
troller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is never read and
no error condition is given.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 4. Bus Read op-
erations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’. One of the Erase Com-
mands must be used to set all the bits in a block or
in the whole memory from ’0’ to ’1’.
Unlock Bypass Command. The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memo-
ry. When the cycle time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these com-
mands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been is-
sued the memory will only accept the Unlock By-
pass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
Unlock Bypass Program Command. The Un-
lock Bypass Program command can be used to
program one address in the memory array at a
time. The command requires two Bus Write oper-
ations, the final write operation latches the ad-
dress and data in the internal state machine and
starts the Program/Erase Controller.
The Program operation using the Unlock Bypass
Program command behaves identically to the Pro-
gram operation using the Program command. A
protected block cannot be programmed; the oper-
ation cannot be aborted and the Status Register is
read. Errors must be reset using the Read/Reset
command, which leaves the device in Unlock By-
pass Mode. See the Program command for details
on the behavior.
Unlock Bypass Reset Command. The Unlock
Bypass Reset command can be used to return to
Read/Reset mode from Unlock Bypass Mode.
Two Bus Write operations are required to issue the
Unlock Bypass Reset command. Read/Reset
11/36
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