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PDF M29KW016E Data sheet ( Hoja de datos )

Número de pieza M29KW016E
Descripción 16 Mbit (1Mb x16 / Uniform Block) 3V Supply LightFlash Memory
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! M29KW016E Hoja de datos, Descripción, Manual

M29KW016E
16 Mbit (1Mb x16, Uniform Block)
3V Supply LightFlash™ Memory
PRELIMINARY DATA
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Read
– VPP = 11.4V to 12.6V for Program and Erase
s ACCESS TIME: 90, 110ns
s PROGRAMMING TIME
– 9µs per Word typical
– Multiple Word Programming Option (2s
typical Chip Program)
s ERASE TIME
– 11s typical factory Chip Erase
s UNIFORM BLOCKS
– 8 blocks of 2 Mbits
s PROGRAM/ERASE CONTROLLER
– Embedded Word Program algorithms
s 10,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code : 88ABh
Figure 1. Packages
SO44 (M)
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 9mm
July 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M29KW016E pdf
Figure 3. SO Connections
M29KW016E
Figure 4. TSOP Connections
RP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1 44
2 43
3 42
4 41
5 40
6 39
7 38
8 37
9 36
10 35
11 M29KW016E 34
12 33
13 32
14 31
15 30
16 29
17 28
18 27
19 26
20 25
21 24
22 23
W
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
VPP
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
AI04377
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
W
RP
NC
VPP
RB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1 48
12 M29KW016E 37
13 36
24 25
A16
NC
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
AI04376b
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M29KW016E arduino
M29KW016E
Table 4. Standard Commands
Bus Write Operations
Command
1st 2nd 3rd 4th 5th 6th
Add Data Add Data Add Data Add Data Add Data Add Data
Read/Reset
1X
F0
3 555 AA 2AA 55 X F0
Auto Select
3 555 AA 2AA 55 555 90
Word Program 4 555 AA 2AA 55 555 A0 PA PD
Block Erase
6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30
Chip Erase
6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The
Command Interface only uses A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ15 are Don’t Care.
Table 5. Multiple Word Program Command
Bus Write Operations
Phase
1st 2nd 3rd 4th 5th
Final -1
Final
Add Data Add Data Add Data Add Data Add Data
Add Data Add Data
Program
3+n
+1
555
AA 2AA
55
555
20
PA1 PD1 PA1 PD2
PA1
PAn
NOT
PA1
X
Verify n+1 PA1 PD1 PA1 PD2 PA1 PD3 PA1 PD4 PA1 PD5
PA1
PAn
NOT
PA1
X
Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check
that the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Don’t Care, n =
number of Words to be programmed.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Min
Typ (1)
Typical after
10k W/E Cycles (1)
Chip Erase
11 25
Block Erase (128 KWords)
1.5
Program (Word)
9
Chip Program (Multiple Word)
2
Chip Program (Word by Word)
9
Program/Erase Cycles (per Block)
10,000
Note: 1. TA = 25°C, VPP = 12V.
Max
120
6
250
35
35
Unit
s
s
µs
s
s
cycles
Table 7. Multiple Word Program Timings
Symbol
Parameter
tMWP-SETUP
MWP Setup time
tMWP-PROG
MWP Program Time
tMWP-TRAN
MWP Program to Verify transition
tMWP-END
MWP Verify to End transition
Note: 1. MWP = Multiple Word Program.
Min Typ Max Unit
500 ns
9 250 µs
2 10 20 µs
2 3 µs
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