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PDF M29KDCL3-32T Data sheet ( Hoja de datos )
| Número de pieza | M29KDCL3-32T | |
| Descripción | 32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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M29KW032E
32 Mbit (2Mb x16, Uniform Block)
3V Supply LightFlash™ Memory
PRODUCT PREVIEW
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Read
– VPP = 11.4V to 12.6V for Program and Erase
s ACCESS TIME: 90, 110ns
s PROGRAMMING TIME
– 9µs per Word typical
– Multiple Word Programming Option (4s
typical Chip Program)
s ERASE TIME
– 21s typical factory Chip Erase
s UNIFORM BLOCKS
– 16 blocks of 2 Mbits
s PROGRAM/ERASE CONTROLLER
– Embedded Word Program algorithms
s 10,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code : 88ACh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 9mm
July 2002
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/30
1 page  
Figure 3. TFBGA Connections (Top view through package)
123456
A A3 A7 RB W A9 A13
B A4 A17 VPP RP A8 A12
C A2 A6 A18 NC A10 A14
D A1 A5 A20 A19 A11 A15
E
A0
DQ0
DQ2
DQ5
DQ7
A16
F
E
DQ8
DQ10
DQ12
DQ14
NC
G
G
DQ9
DQ11
VCC
DQ13
DQ15
H
VSS
DQ1
DQ3
DQ4
DQ6
VSS
M29KW032E
AI04372
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5 Page 
M29KW032E
Table 4. Standard Commands
Bus Write Operations
Command
1st 2nd 3rd 4th 5th 6th
Add Data Add Data Add Data Add Data Add Data Add Data
Read/Reset
1X
F0
3 555 AA 2AA 55 X F0
Auto Select
3 555 AA 2AA 55 555 90
Word Program 4 555 AA 2AA 55 555 A0 PA PD
Block Erase
6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30
Chip Erase
6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The
Command Interface only uses A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ15 are Don’t Care.
Table 5. Multiple Word Program Command
Bus Write Operations
Phase
1st 2nd 3rd 4th 5th
Final -1
Final
Add Data Add Data Add Data Add Data Add Data
Add Data Add Data
Program
3+n
+1
555
AA 2AA
55
555
20
PA1 PD1 PA1 PD2
PA1
PAn
NOT
PA1
X
Verify n+1 PA1 PD1 PA1 PD2 PA1 PD3 PA1 PD4 PA1 PD5
PA1
PAn
NOT
PA1
X
Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check
that the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Don’t Care, n =
number of Words to be programmed.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Min
Typ (1)
Typical after
10k W/E Cycles (1)
Chip Erase
21 25
Block Erase (128 KWords)
1.5
Program (Word)
9
Chip Program (Multiple Word)
4
Chip Program (Word by Word)
18
Program/Erase Cycles (per Block)
10,000
Note: 1. TA = 25°C, VPP = 12V.
Max
120
6
250
35
35
Unit
s
s
µs
s
s
cycles
Table 7. Multiple Word Program Timings
Symbol
Parameter
tMWP-SETUP
MWP Setup time
tMWP-PROG
MWP Program Time
tMWP-TRAN
MWP Program to Verify transition
tMWP-END
MWP Verify to End transition
Note: 1. MWP = Multiple Word Program.
Min Typ Max Unit
500 ns
9 250 µs
2 10 20 µs
2 3 µs
11/30
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