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PDF M295V512B70K1T Data sheet ( Hoja de datos )

Número de pieza M295V512B70K1T
Descripción 512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! M295V512B70K1T Hoja de datos, Descripción, Manual

M29F512B
512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
– 8µs per Byte typical
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Chip Erase algorithm
– Status Register Polling and Toggle Bits
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 24h
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
VCC
PLCC32 (K)
16
A0-A15
W M29F512B
E
G
8
DQ0-DQ7
VSS
AI02739
July 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M295V512B70K1T pdf
M29F512B
Table 4. Commands
Bus Write Operations
Command
1st 2nd 3rd 4th 5th 6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset
1 X F0
3 555 AA 2AA 55 X F0
Auto Select
3 555 AA 2AA 55 555 90
Program
4 555 AA 2AA 55 555 A0 PA PD
Unlock Bypass
3 555 AA 2AA 55 555 20
Unlock Bypass
Program
2 X A0 PA PD
Unlock Bypass Reset 2 X 90 X 00
Chip Erase
6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Note: X Don’t Care, PA Program Address, PD Program Data.
All values in the table are in hexadecimal.
The Command Interface only uses address bits A0-A10 to verify the commands, the upper address bits are Don’t Care.
Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select. After an Auto Select command, read Manufacturer ID or Device ID.
Program, Unlock Bypass Program, Chip Erase. After these commands read the Status Register until the Program/Erase Controller com-
pletes and the memory returns to Read Mode.
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits
may be set to either VIL or VIH. The Manufacturer
Code for STMicroelectronics is 20h.
The Device Code can be read using a Bus Read
operation with A0 = VIH and A1 = VIL. The other
address bits may be set to either VIL or VIH. The
Device Code for the M29F512B is 24h.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. The command re-
quires four Bus Write operations, the final write op-
eration latches the address and data in the internal
state machine and starts the Program/Erase Con-
troller.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 5. Bus Read op-
erations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’ and attempting to do so will
cause an error. The Chip Erase command must be
used to set all the bits in the memory from ’0’ to ’1’.
Unlock Bypass Command. The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memo-
ry. When the access time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these com-
mands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been is-
sued the memory will only accept the Unlock By-
pass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
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M295V512B70K1T arduino
Table 11. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70 °C)
Symbol Alt
Parameter
tAVAV
tELWL
tWLWH
tDVWH
tWHDX
tWHEH
tWHWL
tAVWL
tWLAX
tGHWL
tWHGL
tVCHEL
tWC Address Valid to Next Address Valid
tCS Chip Enable Low to Write Enable Low
tWP Write Enable Low to Write Enable High
tDS Input Valid to Write Enable High
tDH Write Enable High to Input Transition
tCH Write Enable High to Chip Enable High
tWPH Write Enable High to Write Enable Low
tAS Address Valid to Write Enable Low
tAH Write Enable Low to Address Transition
Output Enable High to Write Enable Low
tOEH Write Enable High to Output Enable Low
tVCS VCC High to Chip Enable Low
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
M29F512B
M29F512B
45 70
45 70
00
40 45
25 30
00
00
20 20
00
40 45
00
00
50 50
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Figure 8. Write AC Waveforms, Write Enable Controlled
A0-A15
tAVAV
VALID
tAVWL
E
tELWL
G
tGHWL
tWLWH
W
tWLAX
DQ0-DQ7
tDVWH
VALID
tWHEH
tWHGL
tWHWL
tWHDX
VCC
tVCHEL
AI02757
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