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PDF PEMD9 Data sheet ( Hoja de datos )
| Número de pieza | PEMD9 | |
| Descripción | NPN/PNP resistor-equipped transistors; R1 = 10 kohm/ R2 = 47 kohm | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PEMD9 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD9
NPN/PNP resistor-equipped
transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Preliminary specification
2001 Oct 22
1 page  
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Preliminary specification
PEMD9
103
handbook, halfpage
hFE
102
MHC029
(1)
(2)
(3)
10
110−1
1
10 102
IC (mA)
TR1 (NPN); VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
103
handbook, halfpage
VCEsat
(mV)
MHC030
102
(1)
(2)
(3)
10
10−1
1
10 102
IC (mA)
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2
handbook, halfpage
Vi(off)
(V)
1.6
MHC031
1.2
(1)
(2)
0.8
(3)
0.4
0
10−2
10−1
1 10
IC (mA)
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
102
handbook, halfpage
Vi(on)
(V)
10
MHC032
(1)
1
(2)
(3)
10−1
10−1
1
10 102
IC (mA)
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
2001 Oct 22
5
5 Page 
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
NOTES
Preliminary specification
PEMD9
2001 Oct 22
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PEMD9.PDF ] | |
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