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PDF PDTD114ET Data sheet ( Hoja de datos )

Número de pieza PDTD114ET
Descripción NPN resistor-equipped transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! PDTD114ET Hoja de datos, Descripción, Manual

PDTD1xxxT series
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 — 15 May 2014
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PDTD143ET
SOT23
PDTD143XT
PDTD114ET
JEITA
-
JEDEC
PNP
complement
TO-236AB PDTB143ET
PDTB143XT
PDTB114ET
Package
configuration
small
1.2 Features
500 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
10 % resistor ratio tolerance
AEC-Q101 qualified
High temperature applications
up to 175 °C
1.3 Applications
IC inputs control
Cost-saving alternative to BC807 or
BC817 series transistors in digital
applications
Switching loads

1 page




PDTD114ET pdf
NXP Semiconductors
PDTD1xxxT series
500 mA, 50 V NPN resistor-equipped transistors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
10
aaa-012060
10-1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 2.
FR4 PCB, single-sided copper, tin-plated and standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23/TO-236AB; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.02
0.05
0.01
aaa-012061
0
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23/TO-236AB; typical values
PDTD1XXXT_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 18

5 Page





PDTD114ET arduino
NXP Semiconductors
PDTD1xxxT series
500 mA, 50 V NPN resistor-equipped transistors
103
hFE
102
aaa-012443
(1)
(2)
(3)
10-1
VCEsat
(V)
aaa-012446
(1)
(2)
(3)
10
1
10-1
1
10 102 103
IC (mA)
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 18. PDTD114ET: DC current gain as a function of
collector current; typical values
10-2
1
10 102 103
IC (mA)
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 19. PDTD114ET: Collector-emitter saturation
voltage as a function of collector current;
typical values
102
VI(on)
(V)
10
1
(1)
(2)
(3)
aaa-012451
10
VI(off)
(V)
1
aaa-012575
(1)
(2)
(3)
10-1
10-1
1
10 102 103
IC (mA)
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 20. PDTD114ET: On-state input voltage as a
function of collector current; typical values
10-1
10-1
1 10
IC (mA)
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 21. PDTD114ET: Off-state input voltage as a
function of collector current; typical values
PDTD1XXXT_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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