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PDF LC35W256ET-10W Data sheet ( Hoja de datos )
| Número de pieza | LC35W256ET-10W | |
| Descripción | 256K (32K words x 8 bits) SRAM Control pins: OE and CE | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Ordering number : ENN6304
CMOS IC
LC35W256EM, ET-10W
256K (32K words × 8 bits) SRAM
Control pins: OE and CE
Overview
The LC35W256EM-10W and LC35W256ET-10W are
asynchronous silicon-gate CMOS SRAMs with a 32768-
word by 8-bit structure. These are full-CMOS devices
with 6 transistors per memory cell, and feature ultralow-
voltage operation, a low operating current drain, and an
ultralow standby current. Control inputs include OE for
fast memory access and CE for power saving and device
selection. This makes these devices optimal for systems
that require low power or battery backup, and makes
memory expansion easy. The ultralow standby current
allows these devices to be used with capacitor backup as
well.
Features
• Supply voltage range: 2.7 to 3.6 V
• Access time: 100 ns (maximum)
• Standby current: 0.8 µA (Ta ≤ 60°C)
4.0 µA (Ta ≤ 70°C)
• Operating temperature: –10 to +70°C
• Data retention voltage: 2.0 to 3.6 V
• All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC)
• Input/output shared function pins, 3-state output pins
• No clock required (fully static circuits)
• Package
28-pin SOP (450 mil) plastic package:
LC35W256EM-10W
28-pin TSOP (8 × 13.4 mm) plastic package:
LC35W256ET-10W
Package Dimensions
unit: mm
3187A-SOP28D
[LC35W256EM-10W]
28 15
0.15
1 14
18.0
0.4 1.27
unit: mm
3221-TSOP28 (Type I)
SANYO: SOP28D
[LC35W256ET-10W]
21 8
22 28 1
7
0.55 0.2
8.1
0.125
SANYO: TSOP28 (Type I)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12800RM (OT) No. 6304-1/6
1 page  
Timing Charts
[Read cycle] *1
A0 to A14
CE
OE
*5
DOUT1 to 8
[Write cycle 1] (WE write) *6
A0 to A14
CE
WE
*5
DOUT1to 8
DIN1 to 8
[Write cycle 2] (CE write) *6
A0 to A14
CE
WE
*5
DOUT1to 8
DIN1 to 8
LC35W256EM, ET10W
tRC
tAA
tCA
tCOE
tOA
tOOE
tOH
tCOD
Output data valid
tOOD
tWC
tCW *4
tAS tWP *3
tWR
tWOD
tWOE
*7
tDS tDH
*2 Data in stable
*2
tWC
tAS tCW *4
tWP *3
tWR1
High impedance
tDS tDH1
Data in stable
No. 6304-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LC35W256ET-10W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LC35W256ET-10W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE | Sanyo |
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