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Número de pieza | LC35W1000BTS-70U | |
Descripción | Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM | |
Fabricantes | Sanyo | |
Logotipo | ||
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Preliminary
CMOS IC
LC35W1000BM, BTS-70U/10U
Asynchronous Silicon Gate
1M (131,072 words × 8 bits) SRAM
Overview
The LC35W1000BM and LC35W1000BTS-70U/10U are
asynchronous silicon gate CMOS static RAM devices with
a 131,072-word by 8-bit structure. They provide two chip
enable pins (CE1 and CE2) for device select/deselect
control and one output enable pin (OE) for output control.
They feature high speed, low power, and a wide operating
temperature range.This makes them optimal for use in
systems that require high speed, low power, and battery
backup. They also support easy memory expansion.
Features
• Low-voltage operation: 2.7 to 3.6 V
• Wide operating temperature range: –40 to +85°C
• Access time:
70 ns (maximum):
LC35W1000BM and LC35W1000BTS-70U.
100 ns (maximum):
LC35W1000BM and LC35W1000BTS-10U.
• Low current drain
Standby mode: 0.1 µA (typical*) at Ta = +25°C
10.0 µA (maximum) at Ta = –40 to +70°C
20.0 µA (maximum) at Ta = –40 to +85°C
• Data retention voltage: 2.0 to 3.6 V
• No clock required (fully static circuits)
• Input/output shared function pins, 3-state output pins
• Package
32-pin SOP (525 mil) plastic package:
LC35W1000BM
32-pin TSOP (8 × 14 mm) plastic package (Normal):
LC35W1000BTS
Package Dimensions
unit: mm
3205A-SOP32
[LC35W1000BM-70U/10U]
20.5
32
17
1
(0.73)
1.27
0.4 16
0.15
SANYO: SOP32
unit: mm
3228A-TSOP32DA
[LC35W1000BTS-70U/10U]
8.0
32 17
1
(0.25)
0.5
16
0.2
0.125
SANYO: TSOP32DA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41902RM (OT) No. 6624-1/9
1 page LC35W1000BM, BTS-70U/10U
AC Electrical Characteristics at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V
AC test conditions
Input pulse voltage levels: VIL = 0.2 VCC, VIH = 0.8 VCC
Input rise and fall times: 5 ns
Input and output timing leves: 1/2 VCC
Output load: 30 pF (including the jig capacitance)
Read cycle
Parameter
Read cyle time
Address access time
CE1 access time
CE2 access time
OE access time
Output hold time
CE1 output enable time
CE2 output enable time
OE output enable time
CE1 output disable time
CE2 output disable time
OE output disable time
Write cycle
Parameter
Write cyle time
Address setup time
Write pulse width
CE1 setup time
CE2 setup time
Write recovery time
CE1 write recovery time
CE2 write recovery time
Data setup time
Data hold time
CE1 data hold time
CE2 data hold time
WE output enable time
WE output disable time
Symbol
tRC
tAA
tCA1
tCA2
tOA
tOH
tCOE1
tCOE2
tOCE
tCOD1
tCOD2
tOOD
–70U
min max
70
70
70
70
50
10
10
10
5
40
40
35
–10U
min max
100
100
100
100
50
10
10
10
5
35
35
30
Symbol
tWC
tAS
tWP
tCW1
tCW2
tWR
tWR1
tWR2
tDS
tDH
tDH1
tDH2
tWOE
tWOD
–70U
min max
70
0
50
60
60
0
0
0
40
0
0
0
5
35
–10U
min max
100
0
70
90
90
0
0
0
50
0
0
0
5
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
No. 6624-5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet LC35W1000BTS-70U.PDF ] |
Número de pieza | Descripción | Fabricantes |
LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM | Sanyo |
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