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PDF LC321664AM Data sheet ( Hoja de datos )

Número de pieza LC321664AM
Descripción 1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
Fabricantes Sanyo 
Logotipo Sanyo Logotipo



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Ordering number : EN4795C
CMOS LSI
LC321664AJ, AM, AT-80
1 MEG (65536 words × 16 bits) DRAM
Fast Page Mode, Byte Write
Overview
The LC321664AJ, AM, AT is a CMOS dynamic RAM
operating on a single 5 V power source and having a
65536-word × 16-bit configuration. Equipped with large
capacity capabilities, high-speed transfer rates and low
power dissipation, this series is suited for a wide variety of
applications ranging from computer main memory and
expansion memory to commercial equipment.
Address input utilizes a multiplexed address bus which
permits it to be enclosed in compact plastic packages of
SOJ 40-pin, SOP 40-pin and TSOP 44-pin. Refresh rates
are within 4 ms with 256 row address (A0 to A7) selection
and support RAS-only refresh, CAS-before-RAS refresh
and hidden refresh settings.
There are functions such as page mode, read-modify-
write, and byte-write.
Package Dimensions
unit: mm
3200-SOJ40
[LC321664AJ]
Features
• 65536-word × 16-bit configuration
• Single 5 V ±10% power supply
• All input and output (I/O) TTL compatible
• Supports fast page mode, read-modify-write, and byte-
write.
• Supports output caching control using early write and
Output Enable (OE) control.
• 4 ms refresh using 256 refresh cycles
• Supports RAS-only refresh, CAS-before-RAS refresh
and hidden refresh.
• Packages
SOJ 40-pin (400 mil) plastic package: LC321664AJ
SOP 40-pin (525 mil) plastic package: LC321664AM
TSOP 44-pin (400 mil) plastic package: LC321664AT
• RAS access time/column address access time/CAS
access time/ cycle time/power dissipation
unit : mm
3195-SOP40
[LC321664AM]
SANYO:SOJ40
SANYO:SOP40
Parameter
RAS access time
Column address access time
CAS access time
Cycle time
Power dissipation
(max.)
During operation
During standby
LC321664AJ, AM, AT-80
80 ns
45 ns
30 ns
135 ns
633 mW
5.5 mW (CMOS level)/11 mW (TTL level)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-0005 JAPAN
32896HA (OT)/O3194TH/81094TH (OT) No. 4795-1/30

1 page




LC321664AM pdf
LC321664AJ, AM, AT-80
AC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ± 10% (Note 6, 7, 8)
Parameter
Symbol
min
max
Random read or
write cycle time
tRC
135
Read-write/read-modify-write
cycle time
tRWC
180
Fast page mode cycle time
Fast page mode
Read-write/read-modify-
write cycle time
tPC
tPRWC
55
100
RAS access time
tRAC
80
CAS access time
Column address access time
CAS precharge access time
Output low-impedance
time from CAS low
Output buffer turn-off delay time
Rise or fall time
RAS precharge time
RAS pulse width
RAS pulse width for
fast page mode only
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
CAS precharge time
Row address setup time
Row address hold time
Column address setup time
Column address hold time
Column address hold time
referenced to RAS
Column address to RAS lead time
Read command setup time
Read command hold time
referenced to CAS
Read command hold time
referenced to RAS
Write command hold time
Write command hold time
referenced to RAS
Write command pulse width
tCAC
tAA
tCPA
tCLZ
tOFF
tT
tRP
tRAS
tRASP
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tCP
tASR
tRAH
tASC
tCAH
tAR
tRAL
tRCS
tRCH
tRRH
tWCH
tWCR
tWP
0
0
3
45
80
80
30
80
30
25
17
10
10
0
12
0
20
60
45
0
0
0
15
60
15
30
45
50
20
50
10000
100000
10000
50
35
Unit Note
ns
ns
ns
ns
9, 14
ns 15
ns 9, 14
ns 9, 15
ns 9
ns 9
ns 10
ns
ns
ns
ns
ns
ns
ns
ns 14
ns 15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns 11
ns 11
ns
ns
ns
Continued on next page.
No. 4795-5/30

5 Page





LC321664AM arduino
Lower Byte Early Write Cycle
LC321664AJ, AM, AT-80
No. 4795-11/30

11 Page







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