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PDF LBAV99LT1 Data sheet ( Hoja de datos )
| Número de pieza | LBAV99LT1 | |
| Descripción | Dual Series Switching Diode | |
| Fabricantes | Leshan Radio Company | |
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LESHAN RADIO COMPANY, LTD.
Dual Series Switching Diode
LBAV99LT1
1
ANODE
2
CATHODE
3
DEVICE MARKING
3
CAHODE/ANODE
1
2
LBAV99LT1 = A7
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 µ s
t = 1.0 ms
t = 1.0 S
Symbol
VR
IF
I FM(surge)
V RRM
I F(AV)
I FRM
I FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (1) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–65 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I (BR) = 100 µA)
Reverse Voltage Leakage Current (V R = 70 Vdc)
(V R = 25 Vdc, T J = 150°C)
(V R = 70 Vdc, T J = 150°C)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage (I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100Ω ) (Figure 1)
Forward Recovery Voltage
(I F = 10 mA, t r = 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V (BR)
IR
CD
VF
t rr
V FR
70
—
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2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
—
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
SOT–23
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
Vdc
µAdc
pF
mVdc
ns
V
LBAV99LT1–1/3
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