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PDF KA5M0965 Data sheet ( Hoja de datos )
| Número de pieza | KA5M0965 | |
| Descripción | Fairchild Power Switch(SPS) | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KA5M0965 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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KA5M0965Q
Fairchild Power Switch(SPS)
www.fairchildsemi.com
Features
• Precision fixed operating frequency (70kHz)
• Low start-up current(typ. 100uA)
• Pulse by pulse current limiting
• Over Load protection
• Over current protection
• Over voltage protecton (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Latch mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
IC. Included PWM controller features integrated fixed fre-
quency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, and tempera-
ture compensated precision current sources for loopcompen-
sation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reli-
ability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
TO-3P-5L
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
Internal Block Diagram
Vcc Drain
31
OVP
+
OVP - ou t
27V -
VCC VREF 15V/9V
5uA 1mA
Feedback 4
Soft Start 5
2.5R
+ 5V
7.5V
- OLP
TSD
( TJ = 1 50℃)
OVP - ou t
( VC C = 2 7V)
OCL
( VS= 1 .4 V)
R
UVL O
Vref
OSC
CLK
INTERNAL
BIA S
Good Logic
SQ
-
LEB R
+
VO F FSE T
VOL TAG E
LIMIT Sense
CIRCUIT
FET
14V
VS
Power-on Reset
/Auto-restart
S
Q
R
Sh utd o wn
L at ch
Rsense
2 GND
※ LEB : Leading Edge Blanking
※ OCL : Over Current Limit
©2001 Fairchild Semiconductor Corporation
Rev.1.0.1
1 page  
Typical Performance Characteristics
KA5M0965Q
Top :
V
GS
15 V
10 V
8.0 V
101 7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Note :
1. 250μ s Pulse Test
2. T = 25℃
C
100 101
VDS , Drain-Source Voltage [V]
Figure 1. Output Characteristics
1.3
1.2
V = 10V
GS
1.1
V = 20V
GS
1.0
0.9
0.8
0 2 4 6 8 10 12 14 16
ID , Drain Current [A]
Figure 3. On-Resistance vs. Drain Current
101
150℃
25℃
100 -55℃
10-1
2
※ Note
1. VDS = 50V
2. 250μ s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Thansfer Characteristics
101
100
150℃
25℃
※ Note :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-Drain Voltage [V]
SD
Figure 4. Source-Drain Diode Forward Voltage
3000
2500
2000
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
1000
500
Coss
C
rss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance vs. Drain-Source Voltage
12
V = 120V
DS
10
VDS = 300V
VDS = 480V
8
6
4
2
※ Note : ID = 8.5 A
0
0 5 10 15 20 25 30 35 40 45
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge vs. Gate-Source Voltage
5
5 Page 
Package Dimensions (Continued)
TO-3P-5L (Forming)
KA5M0965Q
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet KA5M0965.PDF ] | |
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