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PDF KA5M0765RQC-TU Data sheet ( Hoja de datos )

Número de pieza KA5M0765RQC-TU
Descripción Fairchild Power Switch(SPS)
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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KA5M0765RQC
Fairchild Power Switch(SPS)
www.fairchildsemi.com
Features
• Precision fixed operating frequency (70KHz)
• Low start-up current (Typ. 100µA)
• Pulse by pulse current limiting
• Over load protection
• Over current protection
• Over voltage protection (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed frequency
oscillator, under voltage lock-out, leading edge blanking, opti-
mized gate turn-on/turn-off driver, thermal shutdown protec-
tion, over voltage protection, and temperature compensated
precision current sources for loop compensation and fault pro-
tection circuitry. Compared to discrete MOSFET and PWM
controller or RCC solution, a SPS can reduce total component
count, design size, weight and at the same time increase effi-
ciency, productivity, and system reliability.
It has a basic platform well suited for cost-effective design in
either a flyback converter or a forward converter.
TO-220-5L
1
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
Internal Block Diagram
Vcc Drain
31
OVP
+
OVP - ou t
27V -
VCC VREF 15V/9V
5uA 1mA
Feedback 4
Soft Start 5
2.5R
+ 5V
7.5V
- OLP
TSD
(TJ=150)
OVP - ou t
( VC C =2 7V)
OCL
( VS= 1 .4 V)
R
UVL O
Vref
OSC
CLK
INTERNAL
BIA S
Good Logic
SQ
-
LEB R
+
VO F FSE T
VOLTAG E
LIMIT Sense
CIRCUIT
FET
14V
VS
Power-on Reset
/Auto-restart
S
Q
R
Sh utd o wn
L at ch
Rsen se
2 GND
LEB : Leading Edge Blanking
OCL : Over Current Limit
©2001 Fairchild Semiconductor Corporation
Rev.1.0.1

1 page




KA5M0765RQC-TU pdf
Typical Performance Characteristics (SFET part)
KA5M0765RQC
VGS
Top : 15.0 V
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Note :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. Output Characteristics
101
150
100 25
-55
10-1
2
Notes :
1. VDS = 50V
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
3.0
VGS =10V
2.5
VGS =20V
2.0
1.5
1.0
0
3 6 9 12 15 18
I , DrainCurrent [A]
D
Figure 3. On-Resistance vs. Drain Curren t
101
100
10-1
0.2
15025
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 4. Source-Drain Diode Forward Voltage
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
Crss = Cgd
Note ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
12
VDS = 130V
10 VDS = 325V
V = 520V
DS
8
6
4
2
Note : ID = 6.5 A
0
0 5 10 15 20 25 30 35 40 45
QG, Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
5

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KA5M0765RQC-TU arduino
Package Dimensions
TO-220-5L (Forming)
KA5M0765RQC
11

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