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PDF KA5L0380RTU Data sheet ( Hoja de datos )

Número de pieza KA5L0380RTU
Descripción Fairchild Power Switch(FPS)
Fabricantes Fairchild 
Logotipo Fairchild Logotipo



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www.fairchildsemi.com
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
8-DIP
Internal Block Diagram
1
1. GND 2. Drain 3. VCC 4. FB
1.6.7.8 Drain
2. GND
3. VCC
4. FB 5. NC
#3 VCC
(*#3 VCC)
#4 FB
(*#4 FB)
32V 5V Internal
Vref bias
Good
logic
9V
5µA 1mA
2.5R
1R
+
OSC
+
S
Q
R
L.E.B
0.1V
7.5V
+ Thermal S/D
27V
OVER VOLTAGE S/D
S
Q
R
Power on reset
*Asterisk - KA5M0365RN, KA5L0365RN
©2002 Fairchild Semiconductor Corporation
SFET
#2 DRAIN
(*#1.6.7.8 DRAIN)
#1 GND
(*#2 GND)
Rev.1.0.5

1 page




KA5L0380RTU pdf
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
RDS(ON)
gfs
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Coss
Crss
td(on)
tr
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
td(off)
tf
Qg
Qgs
Gate-Drain (Miller) Charge
Qgd
Condition
Min. Typ. Max. Unit
VGS=0V, ID=50µA
650 -
-
VDS=Max. Rating, VGS=0V -
- 50
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
- - 200
VGS=10V, ID=0.5A
- 3.6 4.5
VDS=50V, ID=0.5A
2.0 -
-
VGS=0V, VDS=25V,
f=1MHz
- 314.9 -
- 47 -
-9-
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
- 11.2 -
- 34 -
- 28.2 -
- 32 -
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
11.93
switching time is
essentially independent of
- 1.95 -
operating temperature)
6.85
V
µA
µA
S
pF
nS
nC
Note:
1. Pulse test: Pulse width 300µS, duty 2%
2. S = -1--
R
5

5 Page





KA5L0380RTU arduino
Typical Performance Characteristics(SenseFET part) (Continued)
(KA5M0365RN, KA5L0365RN)
KA5X03XX-SERIES
101
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1 Note :
1. 250μ s Pulse Test
2. T = 25
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. Output Characteristics
8.0
7.5
7.0
6.5
V = 10V
GS
6.0
5.5 V = 20V
GS
5.0
4.5
4.0
3.5
3.0
Note : T = 25
J
2.5
01234567
I , Drain Current [A]
D
Figure 3. On-Resistance vs. Drain Current
700
600
500
400
300
200
100
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
Note ;
1. V = 0 V
GS
2. f = 1 MHz
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance vs. Drain-Source Voltage
101
150
100
25
-55
10-1
2
Note
1. V = 50V
DS
2. 250μ s Pulse Test
468
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10
101
100 150
25
Note :
1. V = 0V
GS
2. 250μ s Pulse Test
10-1
0.2
0.4 0.6 0.8 1.0 1.2
V , Source-Drain Voltage [V]
SD
1.4
Figure 4. Source-Drain Diode Forward Voltage
12
10 V = 130V
DS
V = 325V
DS
8
V = 520V
DS
6
4
2 Note : I = 3.0 A
D
0
0 2 4 6 8 10 12
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge vs. Gate-Source Voltage
11

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