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PDF KA5H0380R-YDTU Data sheet ( Hoja de datos )
| Número de pieza | KA5H0380R-YDTU | |
| Descripción | SPS consist of high voltage power SenseFET and current mode PWM IC | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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www.fairchildsemi.com
KA5H0380R/KA5M0380R/KA5L0380R
SPS
Features
• Precision fixed operating frequency (100/67/50kHz)
• Low start-up current(typ. 100uA)
• Pulse by pulse current limiting
• Over current protection
• Over voltage protecton (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
IC. Included PWM controller features integrated fixed fre-
quency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, and tempera-
ture compensated precision current sources for loopcompen-
sation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reli-
ability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
TO-220F-4L
Internal Block Diagram
1. GND 2. DRAIN 3. VCC 4. FB
Vcc
FB
5 uA
UVLO
9V
1 mA
2.5R
1R
5V
Vref
OSC
_
+
GOOD
LOGIC
INTERNAL
BIAS
S
Q
R
L.E.B
SFET
7.5V
+
_
27V
+
_
THERMAL S/D
S
Q
R
Rsens
POWER ON RESET
©2000 Fairchild Semiconductor International
DRAIN
GND
Rev. .5.0
1 page  
Typical Performance Characteristics
KA5H0380R/KA5M0380R/KA5L0380R
101
VGS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
100
@Notes:
1. 300µs PulseTest
2. TC = 25oC
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. Output Characteristics
101
100
150oC
25oC
-25oC
@Notes:
1. VDS = 30V
2. 300µs PulseTest
10-1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Thansfer Characteristics
Fig3. On-Resistance vs. Drain Current
8
7
Vgs=10V
6
5
Vgs=20V
4
3
2
1 @Note: Tj=25℃
0
01234
ID,Drain Current
Figure 3. On-Resistance vs. Drain Current
10
1
0.1
0.4
150oC
25oC
@Notes:
1. VGS = 0V
2. 300µs PulseTest
0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
Figure 4. Source-Drain Diode Forward Voltage
1000
900
800
700
600
500
400
300
200
100
0
100
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance vs. Drain-Source Voltage
10
VDS=160V
8 VDS=400V
VDS=640V
6
4
2
@Note: ID=3.0A
0
0 5 10 15 20 25 30
QG,Total Gate Charge [nC]
Figure 6. Gate Charge vs. Gate-Source Voltage
5
5 Page 
Package Dimensions (Continued)
KA5H0380R/KA5M0380R/KA5L0380R
TO-220F-4L (Forming)
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet KA5H0380R-YDTU.PDF ] | |
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