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PDF K4M563233D Data sheet ( Hoja de datos )
| Número de pieza | K4M563233D | |
| Descripción | 8Mx32 Mobile SDRAM 90FBGA | |
| Fabricantes | Samsung | |
| Logotipo |  |
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K4M563233D-M(E)E/N/I/P
CMOS SDRAM
8Mx32
Mobile SDRAM
90FBGA
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.1
December 2002
Rev. 1.1 Dec. 2002
1 page  
K4M563233D-M(E)E/N/I/P
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 85 °C for Extended, -40 °C to 85°C for Industrial)
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
IC C 1
Burst length = 1
tRC ≥ tR C(min)
IO = 0 mA
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
ICC2 P CKE ≤ VIL (max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL (max), tCC = ∞
I CC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3 P CKE ≤ VIL (max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL (max), tCC = ∞
I CC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
IC C 4
IC C 5
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
tRC ≥ tR C(min)
ICC6 CKE ≤ 0.2V
-M(E)E/I
-M(E)N/P
Version
-80 -1H -1L
Unit Note
150 150 140 mA 1
1.2
mA
1.2
20
mA
10
8
mA
8
45 mA
40 mA
190 160 160 mA 1
320 300 290 mA 2
3 mA 3
1000
uA 4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4M563233D-M(E)E/I**
4. K4M563233D-M(E)N/P**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Rev. 1.1 Dec. 2002
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K4M563233D.PDF ] | |
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