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PDF K4E661612B Data sheet ( Hoja de datos )

Número de pieza K4E661612B
Descripción 4M x 16bit CMOS Dynamic RAM with Extended Data Out
Fabricantes Samsung 
Logotipo Samsung Logotipo



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K4E661612B, K4E641612B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor-
mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated
using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
Active Power Dissipation
Speed
-45
-50
-60
8K
360
324
288
Unit : mW
4K
468
432
396
Refresh Cycles
Part
NO.
K4E661612B*
K4E641612B
Refresh
cycle
8K
4K
Refresh time
Normal L-ver
64ms 128ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Performance Range
Speed
-45
tRAC
50ns
tCAC
12ns
-50 50ns 13ns
-60 60ns 15ns
tRC
74ns
84ns
104ns
tHPC
17ns
20ns
25ns
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
4,194,304 x 16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.

1 page




K4E661612B pdf
K4E661612B, K4E641612B
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Symbol
Input capacitance [A0 ~ A12]
CIN1
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
Output capacitance [DQ0 - DQ15]
CDQ
Min
-
-
-
CMOS DRAM
Max Units
5 pF
7 pF
7 pF
AC CHARACTERISTICS (0°CTA70°C, See note 1,2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min Max
Random read or write cycle time
tRC 74
Read-modify-write cycle time
Access time from RAS
tRWC
tRAC
101
45
Access time from CAS
tCAC
12
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
tAA
tCLZ
tCEZ
23
3
3 13
OE to output in Low-Z
tOLZ
3
Transition time (rise and fall)
RAS precharge time
tT 1 50
tRP 25
RAS pulse width
tRAS
45 10K
RAS hold time
CAS hold time
CAS pulse width
tRSH
tCSH
tCAS
8
35
7 5K
RAS to CAS delay time
tRCD
11 33
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
tRAD
tCRP
tASR
9 22
5
0
Row address hold time
tRAH
7
Column address set-up time
Column address hold time
Column address to RAS lead time
tASC
tCAH
tRAL
0
7
23
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
tRCS
tRCH
tRRH
tWCH
0
0
0
7
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
tWP
tRWL
tCWL
tDS
6
8
7
0
-50
Min Max
84
113
50
13
25
3
3 13
3
1 50
30
50 10K
8
38
8 10K
11 37
9 25
5
0
7
0
7
25
0
0
0
7
7
8
7
0
-60
Min Max
104
138
60
15
30
3
3 13
3
1 50
40
60 10K
10
40
10 10K
14 45
12 30
5
0
10
0
10
30
0
0
0
10
10
10
10
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10
3,4,5
3,10
3
6,21
3
2
4
10
13
13
8
8
16
9,19

5 Page





K4E661612B arduino
K4E661612B, K4E641612B
LOWER BYTE READ CYCLE
NOTE : DIN = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRAS
tRC
tCRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tRCS
tCSH
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tAA
tRAC
OPEN
tOEA
tCAC
tCLZ
tOLZ
OPEN
CMOS DRAM
tRP
tRPC
tRRH
tRCH
tCEZ
tOEZ
DATA-OUT
Dont care
Undefined

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