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PDF K1S321611C-FI70 Data sheet ( Hoja de datos )

Número de pieza K1S321611C-FI70
Descripción 2Mx16 bit Uni-Transistor Random Access Memory
Fabricantes Samsung 
Logotipo Samsung Logotipo



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No Preview Available ! K1S321611C-FI70 Hoja de datos, Descripción, Manual

K1S321611C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
Preliminary
UtRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
Remark
January 16, 2003 Advanced
0.1 Revised
- Deleted 60ns Speed Bin
June 13, 2003
Preliminary
0.2 Revised
August 13, 2003 Preliminary
- Corrected errorta ’48-TBGA’ under PIN DESCRIPTION to ’48-FBGA’
on page2
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.2
August 2003

1 page




K1S321611C-FI70 pdf
K1S321611C
Preliminary
UtRAM
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
Function
K1S321611C-FI70
48-FBGA, 70ns, 2.9V
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width 20ns.
3. Undershoot: -1.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.33)
Typ Max Unit
2.9 3.1
V
00V
-
VCC+0.32)
V
- 0.6 V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Symbol
Test Conditions
ILI VIN=Vss to Vcc
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to Vcc
ICC1 Cycle time=1µs, 100% duty, IIO=0mA, CS10.2V, LB0.2V
or/and UB0.2V, CS2VCC-0.2V, VIN0.2V or VINVCC-0.2V
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH
LB=VIL or/and UB=VIL, VIN=VIH or VIL
VOL IOL = 2.1mA
VOH IOH = -1.0mA
Other inputs=0~Vcc
ISB1 1) CS1VCC-0.2V, CS2VCC-0.2V(CS1 controlled) or
2) 0V CS2 0.2V(CS2 controlled)
Min
-1
-1
-
-
-
2.4
-
Typ Max Unit
- 1 µA
- 1 µA
- 7 mA
- 35 mA
- 0.4 V
- -V
- 100 µA
- 5 - Revision 0.2
August 2003

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