PDF M541 Data sheet ( Hoja de datos )

Número de pieza	M541
Descripción	262/214-Word x 12-Bit Field Memory
Fabricantes	OKI electronic componets
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No Preview Available ! E2L0034-17-Y1 ¡¡SemicondSucetormiconductor MSM5412222 262,214-Word ¥ 12-Bit Field Memory This versioMn:SMJan5.4119292822 Previous version: Dec. 1996 DESCRIPTION The OKI MSM5412222 is a high performance 3-Mbit, 256K ¥ 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. MSM5412222 is a FRAM for wide or low end use in general commodity TVs and VTRs exclusively. MSM5412222 is not designed for high end use in medical systems, professional graphics systems which require long term picture storage, data storage systems and others. Two or more MSM5412222s can be cascaded directly without any delay devices between them. (Cascading provides larger storage depth or a longer delay). Each of the 12-bit planes has separate serial write and read ports. These employ independent control clocks to support asynchronous read and write operations. Different clock rates are also supported, which allow alternate data rates between write and read data streams. The MSM5412222 provides high speed FIFO, First-In First-Out, operation without external refreshing: MSM5412222 refreshes its DRAM storage cells automatically, so that it appears fully static to the users. Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration logic. The MSM5412222’s function is simple, and similar to a digital delay device whose delay-bit- length is easily set by reset timing. The delay length, and the number of read delay clocks between write and read, is determined by externally controlled write and read reset timings. Additional SRAM serial registers, or line buffers for the initial access of 256 ¥ 12-bit enable high speed first-bit-access with no clock delay just after the write or read reset timings. Additionally, the MSM5412222 has a write mask function or input enable function (IE), and read- data skipping function or output enable function (OE). The differences between write enable (WE) and input enable (IE), and between read enable (RE) and output enable (OE) are that WE and RE can stop serial write/read address increments, but IE and OE cannot stop the increment, when write/read clocking is continuously applied to MSM5412222. The input enable (IE) function allows the user to write into selected locations of the memory only, leaving the rest of the memory contents unchanged. This facilitates data processing to display a “picture in picture” on a TV screen. The MSM5412222 is similar in operation and functionality to OKI 1-Mbit Field Memory MSM514222B and 2-Mbit Field Memory MSM518222. Three MSM514222Bs or one MSM514222B plus one MSM518222 can be replaced simply by one MSM5412222. 1/15 1 page ¡ Semiconductor MSM5412222 OPERATION Write Operation The write operation is controlled by three clocks, SWCK, RSTW, and WE. Write operation is accomplished by cycling SWCK, and holding WE high after the write address pointer reset operation or RSTW. Each write operation, which begins after RSTW, must contain at least 80 active write cycles, i.e. SWCK cycles while WE is high. To transfer the last data to the DRAM array, which at that time is stored in the serial data registers attached to the DRAM array, an RSTW operation is required after the last SWCK cycle. Note that every write timing of MSM5412222 is delayed by one clock compared with read timings for easy cascading without any interface delay devices. Write Reset : RSTW The first positive transition of SWCK after RSTW becomes high resets the write address counters to zero. RSTW setup and hold times are referenced to the rising edge of SWCK. Because the write reset function is solely controlled by the SWCK rising edge after the high level of RSTW, the states of WE and IE are ignored in the write reset cycle. Before RSTW may be brought high again for a further reset operation, it must be low for at least two SWCK cycles. Data Inputs : DIN0 - 11 Write Clock : SWCK The SWCK latches the input data on chip when WE is high, and also increments the internal write address pointer. Data-in setup time tDS, and hold time tDH are referenced to the rising edge of SWCK. Write Enable : WE WE is used for data write enable/disable control. WE high level enables the input, and WE low level disables the input and holds the internal write address pointer. There are no WE disable time (low) and WE enable time (high) restrictions, because the MSM5412222 is in fully static operation as long as the power is on. Note that WE setup and hold times are referenced to the rising edge of SWCK. Input Enable : IE IE is used to enable/disable writing into memory. IE high level enables writing. The internal write address pointer is always incremented by cycling SWCK regardless of the IE level. Note that IE setup and hold times are referenced to the rising edge of SWCK. 5/15 5 Page ¡ Semiconductor TIMING WAVEFORM Write Cycle Timing (Write Reset) MSM5412222 n cycle 0 cycle 1 cycle 2 cycle SWCK VIH VIL tWSWH tWSWL tRSTWS tRSTWH tT tSWC VIH RSTW VIL tDH tDS DIN n - 1 n 0 1 2 WE IE VIH VIL VIH VIL VIH VIL Write Cycle Timing (Write Enable) n cycle Disable cycle Disable cycle SWCK n+1 cycle tWENH tWDSH tWDSS tWENS WE ,,,tWWEL tWWEH VIH VIL VIH VIL DIN n - 1 n VIH n+1 VIL IE VIH VIL RSTW VIH VIL 11/15 11 Page

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