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Número de pieza | M4N26 | |
Descripción | 6-Pin DIP Optoisolators Transistor Output | |
Fabricantes | Motorola Inc | |
Logotipo | ||
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by M4N26/D
6-Pin DIP Optoisolators
Transistor Output
The M4N26 device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• I/O Interfacing
• Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current — Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
VR 3 Volts
IF 60 mA
PD 100 mW
1.41 mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
VCEO
VECO
VCBO
IC
PD
30
7
70
50
150
Volts
Volts
Volts
mA
mW
1.76 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD 250 mW
2.94 mW/°C
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
TA – 55 to +100
Tstg – 55 to +150
°C
°C
Soldering Temperature (10 sec, 1/16″ from case)
TL 260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
M4N26
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
SCHEMATIC
16
25
34
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
© MMoototroorlao,lIancO. 1p9t9o7electronics Device Data
1
1 page 1.5
70°C
1.0
25°C
–20°C
0.5
50°C
NORMALIZED TO:
VCE = 10 V
IB = 20 mA
TA = 25°C
1000
100
tpHL
10
tpLH
TA = 25°C
IF = 10 mA
VCC = 5.0 V
VTH = 1.5 V
M4N26
2.5
2.0
1.5
VCE = 0.4 V
0
1.0
10 100
IB, BASE CURRENT (mA)
1000
Figure 11. Normalized HFE vs. Base Current
and Temperature
1.0
0.1
1.0 10
WRL, COLLECTOR LOAD RESISTOR (K )
1.0
100
Figure 12. Propagation Delay vs. Collector
Load Resistor
IF
tD
VO
tR
tPLH
VTH = 1.5 V
tPHL tS tF
Figure 13. Switching Timing
VCC = 5.0 V
F = 10 KHz
DF = 50%
IF = 10 mA
RL
VO
Figure 14. Switching Schematic
Motorola Optoelectronics Device Data
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet M4N26.PDF ] |
Número de pieza | Descripción | Fabricantes |
M4N25 | 6-Pin DIP Optoisolators Transistor Output | Motorola Inc |
M4N25 | 6-Pin DIP Optoisolators Transistor Output | Motorola Inc |
M4N26 | 6-Pin DIP Optoisolators Transistor Output | Motorola Inc |
M4N26 | 6-Pin DIP Optoisolators Transistor Output | Motorola Inc |
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