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PDF PD8933 Data sheet ( Hoja de datos )
| Número de pieza | PD8933 | |
| Descripción | InGaAs AVALANCHE PHOTO DIODES | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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TYPE
PD8933NAME
MITSUBISHI LASER DIODES
PD8XX3 SERIES
InGaAs AVALANCHE PHOTO DIODES
DESCRIPTION
PD8XX3 series are InGaAs avalanche photodiode which has
a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving
the light having a wavelength band of 1000 to 1600nm. This
photodiode features low noise, a high quantum efficiency and
a high speed response is suitable for the light receiving
element for long - distance optical communications.
FEATURES
• φ35 µ m active diameter
• Low noise
• High speed response
• Small dark current
• High quantum efficiency
APPLICATION
Receiber for long-distance fiber-optic communication systems
ABSOLUTE MAXIMUM RATING
Symbol
IR
IF
TC
Tstg
Parameter
Reverse current
Forward current
Case temperature
Storage temperature
Conditions
-
-
-
-
Ratings
500
2
-40~+85
-40~+100
Unit
µA
mA
˚C
˚C
ELECTRICAL /OPTICAL CHARACTERISTICS (TC = 25˚C)
Symbol
V(BR)R
Ct
ID
η
fc
parameter
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
Test conditions
IR = 100 µ A
VR = 0.9V (BR) R,f = 1MHz
VR = 0.9V (BR) R
M = 1, λ = 1550nm
M = 10,RL = 50Ω, -3dB
Limits
Unit
Min. Typ. Max.
40 60 90 V
- 0.5 0.7 pF
- 30 60 nA
- 80 - %
1.8 2.5
- GHz
SEP.2000
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PD8933.PDF ] | |
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