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PDF M54587FP Data sheet ( Hoja de datos )
| Número de pieza | M54587FP | |
| Descripción | 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54587P and M54587FP are eight-circuit collector-current-
synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
q High breakdown voltage (BVCEO ≥ 50V)
q High-current driving (IC(max) = 500mA)
q “L” active level input
q With input diode
q With clamping diodes
q Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
INPUT
NC 1
IN1 2
IN2 3
IN3 4
IN4 5
IN5 6
IN6 7
IN7 8
IN8 9
GND 10
20 COM COMMON
19 O1
18 O2
17 O3
16 O4
OUTPUT
15 O5
14 O6
13 O7
12 O8
11 VCC
20P4(P)
Package type 20P2N-A(FP)
NC : No connection
APPLICATION
Interfaces between microcomputers and high-voltage, high-
current drive systems, drives of relays and MOS-bipolar logic
IC interfaces
FUNCTION
The M54587 is produced by adding PNP transistors to
M54585 inputs. Eight circuits having active L-level inputs are
provided.
Resistance of 7kΩ and diode are provided in series between
each input and PNP transistor base. The input diode is in-
tended to prevent the flow of current from the input to the
VCC. Without this diode, the current flow from “H” input to the
VCC and the “L” input circuits is activated, in such case where
one of the inputs of the 8 circuits is “H” and the others are “L”
to save power consumption. The diode is inserted to prevent
such misoperation.
This device is most suitable for a driver using NMOS IC out-
put especially for the driver of current sink.
Collector current is 500mA maximum. Collector-emitter sup-
ply voltage is 50V.
The M54587FP is enclosed in a molded small flat package,
enabling space saving design.
CIRCUIT DIAGRAM (EACH CIRCUIT)
INPUT
7K
7K
2.7K
7.2K 3K
VCC
COM
OUTPUT
GND
The eight circuits share the Vcc, COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
Mar.2002
1 page  
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Clamping Diode Characteristics
500
400
300
Ta = 75°C
Ta = 25°C
Ta = –20°C
200
100
0
0 0.5 1.0 1.5 2.0
Forward bias voltage VF (V)
Mar.2002
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet M54587FP.PDF ] | |
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