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PDF M54522FP Data sheet ( Hoja de datos )

Número de pieza M54522FP
Descripción 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Fabricantes Mitsubishi 
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54522P and M54522FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and interfaces between microcom-
puter output and high-current or high-voltage systems
FUNCTION
The M54522P and M54522FP each have eight circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20kbetween input transistor bases and input pins.
A spike-killer clamping diode is provided between each out-
put pin (collector) and COM pin. The output transistor emit-
ters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54522FP is enclosed in a molded small flat package,
enabling space-saving design.
PIN CONFIGURATION
IN1
1
IN2
2
IN3
3
INPUT
IN4
4
IN5
5
IN6
6
IN77
IN88
GND 9
18
O1
17
O2
16
O3
15
O4
OUTPUT
14
O5
13
O6
12 O7
11 O8
10 COM COMMON
Package type 18P4G(P)
NC 1
IN1
2
IN2
3
IN34
IN45
INPUT
IN5
6
IN6
7
IN78
IN89
20 NC
19
O1
18
O2
17
O3
16 O4
OUTPUT
15
O5
14
O6
13 O7
12 O8
GND 10
11 COM COMMON
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
INPUT
20K
20K
COM
OUTPUT
2K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Aug. 1999

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