DataSheet.es    


PDF PD54008 Data sheet ( Hoja de datos )

Número de pieza PD54008
Descripción RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



Hay una vista previa y un enlace de descarga de PD54008 (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! PD54008 Hoja de datos, Descripción, Manual

PD54008 - PD54008S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD54008 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54008’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54008
XPD54008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54008S
XPD54008S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol
Parameter
V(BR)DSS Drain Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 0C)
Tj Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
May 2000
Value
25
±20
5
73
165
-65 to 165
1.3
Unit
V
V
A
W
0C
0C
0C/W
1/10

1 page




PD54008 pdf
TYPICAL PERFORMANCE
Output Power vs. Drain Voltage
PD54008 - PD54008S
Drain Efficency vs. Drain Voltage
20
480 MHz
15
500 MHz
10 520MHz
5
Idq = 150mA
PIN = 1 W
0
5 6 7 8 9 10 11 12
VDS, DRAIN-SOURCE VOLTAGE (V)
Output Power vs. Gate Bias Voltage
10
480 MHz
8
6 500 MHz
520 MHz
4
60
480 MHz
50
500 MHz
40
520MHz
30
20
5
Idq =150 mA
PIN = 1 W
6 7 8 9 10 11
VDS, DRAIN-SOURCE VOLTAGE (V)
12
Output Power vs. Input Power
PD54008S
10
480 MHz
8
520 MHz
500 MHz
6
4
2
VDD= 7.5 V
PIN= 1 W
0
0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE BIAS VOLTAGE (V)
Power Gain vs. Output Power
16
14
480MHz
12
520MHz
500MHz
10
8
VDD = 7.5 V
IDQ= 150mA
6
0 1 2 3 4 5 6 7 8 9 10
Pout, OUTPUT POWER (W)
2
VDD= 7.5V
IDQ= 150 mA
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Pin, INPUT POWER (W)
Drain Efficiency vs. Output Power
70
480 MHz
60
500 MHz
50 520MHz
40
30
20
VDD= 7.5 V
10 IDQ= 150 mA
0
0 1 2 3 4 5 6 7 8 9 10
Pout, OUTPUT POWER (W)
5/10

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet PD54008.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
PD54003RF POWER TRANSISTORS The LdmoST Plastic FAMILYSTMicroelectronics
STMicroelectronics
PD54003-ERF POWER transistorST Microelectronics
ST Microelectronics
PD54003-PD54003SRF POWER TRANSISTORS The LdmoST Plastic FAMILYSTMicroelectronics
STMicroelectronics
PD54003LRF POWER TRANSISTORS The LdmoST PLASTIC FAMILYST Microelectronics
ST Microelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar