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PDF EFA120D-SOT89 Data sheet ( Hoja de datos )
| Número de pieza | EFA120D-SOT89 | |
| Descripción | Low Distortion GaAs Power FET | |
| Fabricantes | ETC | |
| Logotipo |  |
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Excelics
EFA120D-SOT89
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
Features
• LOW COST SURFACE-MOUNT PLASTIC PACKAGE
• +28.0dBm TYPICAL OUTPUT POWER
• 14.0dB TYPICAL POWER GAIN AT 2GHz
• 0.7dB TYPICAL NOISE FIGURE AT 2GHz
• +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT
AT 2GHz
• 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Applications
• Analog and Digital Wireless System
• HPA
29-31
DC-4GHz
177-183
65-75
SOURCE
65-69
16-20
59 14-16
(Top View)
All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
NF
IP3
Output Power at 1dB Compression
f = 2GHz
Vds=7V, Ids=180mA
Gain at 1dB Compression
f = 2GHz
Vds=7V, Ids=180mA
Power Added Efficiency at 1dB Compression
Vds=7V, Ids=180mA
f = 2GHz
Noise Figure
f = 2GHz
Vds=5V, Ids=75mA
Vds=5-7V, Ids=180mA
Output 3rd Order Intercept Point
f = 2GHz
Vds=5-7V, Ids=180mA
Vds=5V, Ids=75mA
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=3mA
BVgd
Drain Breakdown Voltage Igd=1.2mA
BVgs
Source Breakdown Voltage Igs=1.2mA
Rth Thermal Resistance
*Overall Rth depends on case mounting.
MIN
26.5
12.0
TYP
28.0
14.0
MAX
45
0.7
1.2
42
33
220 340 440
140 180
-2.0 -3.5
-11 -15
-7 -14
43*
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
12V
7V
Vgs Gate-Source Voltage
-8V
-4V
Ids Drain Current Idss 390mA
Igsf Forward Gate Current
30mA
5mA
Pin Input Power
Tch Channel Temperature
Tstg Storage Temperature
26dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
3.2 W
2.7 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
UNIT
dBm
dB
%
dB
dBm
mA
mS
V
V
V
oC/W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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