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PDF TDA21106 Data sheet ( Hoja de datos )

Número de pieza TDA21106
Descripción High speed Driver with bootstrapping for dual Power MOSFETs
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! TDA21106 Hoja de datos, Descripción, Manual

CoreControl TM
Data Sheet
High speed Driver with bootstrapping for
dual Power MOSFETs
TDA21106
Features
P-DSO-8
Fast rise and fall times for frequencies up to 2 MHz
Capable of sinking more than 4A peak currents for lowest switching losses
Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC
setting; Low Side MOSFET at 12 V.
Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON
losses and gate drive losses
Integrates the bootstrap diode for reducing the part count
Prevents from cross-conducting by adaptive gate drive control
High voltage rating on Phase node
Supports shut-down mode for very low quiescent current through three-state input
Compatible to standard PWM controller ICs (Intersil, Analog Devices)
Floating High Side MOSFET drive
Footprint compatible to TDA21101G and HIP6601B
Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s
Type
TDA21106
Package
P-DSO-8
Marking
21106
Ordering Code
Q67042-S4223
Pinout
Top View
GATEHS 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 PVCC
6 VCC
5 GATELS
Number Name
1 GATEHS
2 BOOT
3 PWM
4 GND
5 GATELS
6 VCC
7 PVCC
8 PHASE
Description
Gate drive output for the N-Channel
High side MOSFET
Floating bootstrap pin. To be
connected to the external bootstrap
capacitor to generate the gate drive
voltage for the high side N-Channel
MOSFET
Input for the PWM controller signal
Ground
Gate drive output for the N-Channel
Low Side MOSFET
Supply voltage
Input to adjust the High Side gate
drive
To be connected to the junction of
the High Side and the Low Side
MOSFET
Rev 2.0
Page 1
Apr, 2004

1 page




TDA21106 pdf
CoreControl TM
Timing diagram
Data Sheet
TDA21106
~5V
1 1VV
tf LS
tr LS
At Tj = 25 °C, unless otherwise specified
Parameter
Conditions
Values
Min. Typ. Max.
Output Characteristic High Side (HS) and Low Side (LS), ensured by design
Output
Resistance
HS; Source
VPVCC = VVCC= 12 V
I_HS_SRC = 2 A
1 (1)
HS; Sink
VPVCC = VVCC= 12 V
0.9 1.3
LS; Source
VPVCC = VVCC= 12 V
I_HS_SRC = 2 A
1.4 (2)
LS; Sink
VPVCC = VVCC= 12 V
0.9 1.3
Peak output-
current
HS; Source
HS; Sink
LS; Source
VPVCC = VVCC= 12 V
t_P_HS / Pulse < 20 ns
t_P_LS / Pulse < 40 ns
4
4
4
LS; Sink
4
1 Incremental resistance VBOOT-VGATEHS=4.3V @ ISOURCE=2A
2 Incremental resistance VVCC –VGATELS=4.4V @ ISOURCE=2A
Unit
A
Rev 2.0
Page 5
Apr, 2004

5 Page










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