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Número de pieza | TDA21102 | |
Descripción | High speed Driver with bootstrapping for dual Power MOSFETs | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TDA21102 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! CoreControl TM
Data Sheet
High speed Driver with bootstrapping for
dual Power MOSFETs
TDA21102
Features
P-DSO-8-7P-DSO-14-3
• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking more than 4 A peak current for lowest switching losses
• Charges the High Side and Low Side MOSFET´s gate to 6..12 V according to
PVCC setting.
• Adjustable High Side and Low Side MOSFET gate drive voltage via PVCC pin for
optimizing ON losses and gate drive losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• High voltage rating on Phase node
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs (Intersil, Analog Devices)
• Floating High Side MOSFET drive
• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s
Type
TDA21102
Package Marking
P-DSO-14-3 21102
Ordering Code
Q67042-S4244
Pinout
PWM1
PWM2
GND
GATELS1
PVCC
PGND
GATELS2
Top View
VCC
PHASE1
GATGATEHS1
BOOT1
BOOT2
GATEHS2
PHASE2
Rev. 1.0
Number
1
2
3
4
5
6
7
8
9
10
Name
PWM1
PWM2
GND
GATELS1
PVCC
PGND
GATELS2
PHASE2
GATEHS2
BOOT2
11 BOOT1
12 GATEHS1
13 PHASE1
14 VCC
Page 1
Description
Input for the PWM1 controller signal
Input for the PWM2 controller signal
Ground
Gate drive output for the N-Channel Low Side
MOSFET 1.
Input to adjust the High Side gate drive
Power ground return for the Low Side Drivers
Gate drive output for the N-Channel Low Side
MOSFET 2.
To be connected to the junction of the High
Side and the Low Side MOSFET 2
Gate drive output for the N-Channel High Side
MOSFET 2.
Floating bootstrap pin. To be connected to the
external bootstrap capacitor to generate the
gate drive voltage for the High Side N-Channel
MOSFET 2.
Floating bootstrap pin. To be connected to the
external bootstrap capacitor to generate the
gate drive voltage for the High Side N-Channel
MOSFET 1.
Gate drive output for the N-Channel High Side
MOSFET 1.
To be connected to the junction of the High
Side and the Low Side MOSFET 1
Supply Voltage
Dec 19, 2003
1 page CoreControl TM
Data Sheet
TDA21102
Operating Conditions
At Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Voltage supplied to
‘VCC’ pin
Voltage supplied to
‘PVCC’ pin
Input signal transition
frequency
Power dissipation
Junction temperature
VVCC
VPVCC
f
PTOT
TJ
TA = 25 °C, TJ = 125 °C
Values
Unit
Min. Typ. Max.
10.8
13.2 V
6 13.2 V
0.1 2 MHz
0.9 W
-25 150 °C
At Tj = 25 °C, unless otherwise specified
Parameter
Conditions
Values
Unit
Min. Typ. Max.
Output Characteristic High Side (HS) and Low Side (LS), ensured by design
Output
Resistance
HS; Source
PPVCC = VVCC= 12 V
I_HS_SRC = 2 A
1.2 Ω
HS; Sink
PPVCC = VVCC= 12 V
1 1.5 Ω
LS; Source
LS; Sink
PPVCC = VVCC= 12 V
I_HS_SRC = 2 A
PPVCC = VVCC= 12 V
1Ω
1 1.3 Ω
Peak output-
current
HS; Source
HS; Sink
LS; Source
LS; Sink
PPVCC = VVCC= 12 V
t_P_HS / Pulse < 20 ns
t_P_LS / Pulse < 40 ns
D_HS < 2%, D_LS < 4%
4
4
4
4
A
Rev. 1.0
Page 5
Dec 19, 2003
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TDA21102.PDF ] |
Número de pieza | Descripción | Fabricantes |
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