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PDF TDA21102 Data sheet ( Hoja de datos )

Número de pieza TDA21102
Descripción High speed Driver with bootstrapping for dual Power MOSFETs
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! TDA21102 Hoja de datos, Descripción, Manual

CoreControl TM
Data Sheet
High speed Driver with bootstrapping for
dual Power MOSFETs
TDA21102
Features
P-DSO-8-7P-DSO-14-3
Fast rise and fall times for frequencies up to 2 MHz
Capable of sinking more than 4 A peak current for lowest switching losses
Charges the High Side and Low Side MOSFET´s gate to 6..12 V according to
PVCC setting.
Adjustable High Side and Low Side MOSFET gate drive voltage via PVCC pin for
optimizing ON losses and gate drive losses
Integrates the bootstrap diode for reducing the part count
Prevents from cross-conducting by adaptive gate drive control
High voltage rating on Phase node
Supports shut-down mode for very low quiescent current through three-state input
Compatible to standard PWM controller ICs (Intersil, Analog Devices)
Floating High Side MOSFET drive
Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s
Type
TDA21102
Package Marking
P-DSO-14-3 21102
Ordering Code
Q67042-S4244
Pinout
PWM1
PWM2
GND
GATELS1
PVCC
PGND
GATELS2
Top View
VCC
PHASE1
GATGATEHS1
BOOT1
BOOT2
GATEHS2
PHASE2
Rev. 1.0
Number
1
2
3
4
5
6
7
8
9
10
Name
PWM1
PWM2
GND
GATELS1
PVCC
PGND
GATELS2
PHASE2
GATEHS2
BOOT2
11 BOOT1
12 GATEHS1
13 PHASE1
14 VCC
Page 1
Description
Input for the PWM1 controller signal
Input for the PWM2 controller signal
Ground
Gate drive output for the N-Channel Low Side
MOSFET 1.
Input to adjust the High Side gate drive
Power ground return for the Low Side Drivers
Gate drive output for the N-Channel Low Side
MOSFET 2.
To be connected to the junction of the High
Side and the Low Side MOSFET 2
Gate drive output for the N-Channel High Side
MOSFET 2.
Floating bootstrap pin. To be connected to the
external bootstrap capacitor to generate the
gate drive voltage for the High Side N-Channel
MOSFET 2.
Floating bootstrap pin. To be connected to the
external bootstrap capacitor to generate the
gate drive voltage for the High Side N-Channel
MOSFET 1.
Gate drive output for the N-Channel High Side
MOSFET 1.
To be connected to the junction of the High
Side and the Low Side MOSFET 1
Supply Voltage
Dec 19, 2003

1 page




TDA21102 pdf
CoreControl TM
Data Sheet
TDA21102
Operating Conditions
At Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Voltage supplied to
‘VCC’ pin
Voltage supplied to
‘PVCC’ pin
Input signal transition
frequency
Power dissipation
Junction temperature
VVCC
VPVCC
f
PTOT
TJ
TA = 25 °C, TJ = 125 °C
Values
Unit
Min. Typ. Max.
10.8
13.2 V
6 13.2 V
0.1 2 MHz
0.9 W
-25 150 °C
At Tj = 25 °C, unless otherwise specified
Parameter
Conditions
Values
Unit
Min. Typ. Max.
Output Characteristic High Side (HS) and Low Side (LS), ensured by design
Output
Resistance
HS; Source
PPVCC = VVCC= 12 V
I_HS_SRC = 2 A
1.2
HS; Sink
PPVCC = VVCC= 12 V
1 1.5
LS; Source
LS; Sink
PPVCC = VVCC= 12 V
I_HS_SRC = 2 A
PPVCC = VVCC= 12 V
1
1 1.3
Peak output-
current
HS; Source
HS; Sink
LS; Source
LS; Sink
PPVCC = VVCC= 12 V
t_P_HS / Pulse < 20 ns
t_P_LS / Pulse < 40 ns
D_HS < 2%, D_LS < 4%
4
4
4
4
A
Rev. 1.0
Page 5
Dec 19, 2003

5 Page










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