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PDF TDA1517ATW Data sheet ( Hoja de datos )
| Número de pieza | TDA1517ATW | |
| Descripción | 8 W BTL or 2 x 4 W SE power amplifier | |
| Fabricantes | NXP Semiconductors | |
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INTEGRATED CIRCUITS
DATA SHEET
TDA1517ATW
8 W BTL or 2 × 4 W SE power
amplifier
Product specification
Supersedes data of 2001 Feb 14
File under Integrated Circuits, IC01
2001 Apr 17
1 page  
Philips Semiconductors
8 W BTL or 2 × 4 W SE power amplifier
Product specification
TDA1517ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VP
VPSC
Vrp
ERGo
IOSM
IORM
Ptot
Tvj
Tstg
Tamb
PARAMETER
CONDITIONS
supply voltage
AC and DC short-circuit-safe voltage
reverse polarity voltage
energy handling capability at outputs VP = 0 V
non-repetitive peak output current
repetitive peak output current
total power dissipation
virtual junction temperature
storage temperature
ambient temperature
MIN.
−
−
−
−
−
−
−
−
−55
−40
MAX.
18
18
6
200
4
2.5
5
150
+150
+85
UNIT.
V
V
V
mJ
A
A
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
tbf
PARAMETER
CONDITIONS
VALUE
−
UNIT
−
DC CHARACTERISTICS
VP = 12 V; Tamb = 25 °C; measured in Fig.3; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Supply
VP supply voltage
Iq quiescent current
Operating condition
note 1
RL = ∞
6.0
−
VMODE(oper)
IMODE(oper)
VO
∆VOO
mode switch voltage level
mode switch current
DC output voltage
DC output offset voltage
Mute condition
VMODE(mute)
VO
∆VOO
mode switch voltage level
DC output voltage
DC output offset voltage
Standby condition
VMODE = 12 V
8.5
−
−
−
3.3
−
−
VMODE(stb)
Istb
mode switch voltage level
standby current
0
−
Note
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
TYP.
12
40
−
15
5.7
−
−
5.7
−
−
0.1
MAX.
18
80
VP
40
−
150
6.4
−
150
2
100
UNIT
V
mA
V
µA
V
mV
V
V
mV
V
µA
2001 Apr 17
5
5 Page 
Philips Semiconductors
8 W BTL or 2 × 4 W SE power amplifier
handbook, full pagewidth
Product specification
TDA1517ATW
top view
bottom copper layout
top view
top copper layout
+VP
1000 µF
25 V
100 nF
220 nF
TDA
1517ATW
IN2
Std By
On
− OUT2
IN1
100 µF/16 V
1000 µF
16 V
sept −2000
+ OUT1
top view
component layout
MGU312
For BTL applications the two 1000 µF/16 V capacitors must be replaced by 0 Ω jumpers.
Fig.6 Printed-circuit board layout for BTL and SE application.
2001 Apr 17
11
11 Page | ||
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