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Número de pieza | TDA1020 | |
Descripción | 12 W car radio power amplifier | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TDA1020 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! INTEGRATED CIRCUITS
DATA SHEET
TDA1020
12 W car radio power amplifier
Product specification
File under Integrated Circuits, IC01
November 1982
1 page Philips Semiconductors
12 W car radio power amplifier
Product specification
TDA1020
HEATSINK DESIGN EXAMPLE
The derating of 8 K/W of the encapsulation requires the following external heatsink (for sine-wave drive):
10 W in 2 Ω at VP = 14,4 V
maximum sine-wave dissipation: 5,2 W
Tamb = 60 °C maximum
Rth j-a = Rth j-tab + Rth tab-h + Rth h-a = -1---5---50---,--–-2----6---0-- = 17,3 K/W
Since Rth j-tab + Rth tab-h = 8 K/W, Rth h-a = 17,3 − 8 ≈ 9 K/W.
D.C. CHARACTERISTICS
Supply voltage range (pin 3)
Repetitive peak output current
Total quiescent current
at VP = 14,4 V
at VP = 18 V
VP
IORM
Itot
Itot
<
typ.
typ.
6 to 18 V
4A
30 mA
40 mA
A.C. CHARACTERISTICS
Tamb = 25 °C; VP = 14,4 V; RL = 4 Ω; f = 1 kHz; unless otherwise specified; see also Fig.3
Output power at dtot = 10%; with bootstrap (note 1)
VP = 14,4 V; RL = 2 Ω
>
Po typ.
VP = 14,4 V; RL = 4 Ω
>
Po typ.
VP = 14,4 V; RL = 8 Ω
Output power at dtot = 1%; with bootstrap (note 1)
VP = 14,4 V; RL = 2 Ω
VP = 14,4 V; RL = 4 Ω
VP = 14,4 V; RL = 8 Ω
Output voltage (r.m.s. value)
Po typ.
Po typ.
Po typ.
Po typ.
RL = 1 kΩ; dtot = 0,5%
Output power at dtot = 10%; without bootstrap
Voltage gain
Vo(rms)
Po
typ.
>
preamplifier (note 2)
typ.
Gv1
power amplifier
typ.
Gv2
total amplifier
Gv tot
typ.
10 W
12 W
6W
7W
3,5 W
9,5 W
6W
3W
5V
4,5 W
17,7 dB
16,7 to 18,7 dB
29,5 dB
28,5 to 30,5 dB
47 dB
46,2 to 48,2 dB
November 1982
5 Preliminary Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TDA1020.PDF ] |
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TDA1020 | 12 W car radio power amplifier | NXP Semiconductors |
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