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PDF TCET1100G Data sheet ( Hoja de datos )
| Número de pieza | TCET1100G | |
| Descripción | Optocoupler with Phototransistor Output | |
| Fabricantes | Vishay Telefunken | |
| Logotipo |  |
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TCET1100, TCET1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Temperature
CE
43
17197_4
C
17197_5
12
AC
DVE
DESCRIPTION
The TCET110. consists of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4-lead
plastic dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• cUL tested, file A52744
• BSI: EN 60065:2002, EN 60950:2000
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO
FEATURES
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection
against electrical shock (safety class II)
• Isolation materials according to UL 94 V-O
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)
VIORM = 848 Vpeak
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 175
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage ≤ 300 V
• for appl. class I - III at mains voltage ≤ 600 V according to
DIN EN 60747-5-5 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
www.vishay.com
810
For technical questions, contact: [email protected]
Document Number: 83503
Rev. 2.3, 14-Oct-09
1 page  
TCET1100, TCET1100G
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Temperature
300
250
Phototransistor
Psi (mW)
200
150
100
50
IR-diode
Isi (mA)
0
0
94 9182
25 50 75 100 125 150
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
VIOTM
VPd
VIOWM
VIORM
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
SYMBOL
td
tr
ton
ts
tf
toff
ton
toff
MIN.
TYP.
3
3
6
0.3
4.7
5
9
10
MAX.
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
IF IF
0
R G = 50 Ω
tp
= 0.01
T
tp = 50 µs
95 10804
50 Ω
+5V
IC = 2 mA; adjusted through
input amplitude
Channel I
100 Ω
Channel II
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Fig. 3 - Test Circuit, Non-Saturated Operation
IF IF = 10 mA
0
+5V
IC
RG = 50 Ω
tp
= 0.01
T
t p = 50 µs
95 10843
50 Ω
1 kΩ
Channel I
Channel II
Oscilloscope
RL ≥ 1 MΩ
CL ≤ 20 pF
Fig. 4 - Test Circuit, Saturated Operation
www.vishay.com
814
For technical questions, contact: [email protected]
Document Number: 83503
Rev. 2.3, 14-Oct-09
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TCET1100G.PDF ] | |
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