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Número de pieza | TC7SA00F | |
Descripción | 2-Input NAND Gate | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TC7SA00F (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! TC7SA00F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SA00F,TC7SA00FU
2-Input NAND Gate
Features
• Low voltage operation : VCC = 1.8 to 3.6 V
• High speed operation : tpd = 2.8 ns (max) (VCC = 3.0 to 3.6 V)
: tpd = 3.7 ns (max) (VCC = 2.3 to 2.7 V)
: tpd = 7.4 ns (max) (VCC = 1.8 V)
• High output current : IOH/IOL = ±24 mA (min) (VCC = 3.0 V)
: IOH/IOL = ±18 mA (min) (VCC = 2.3 V)
: IOH/IOL = ±6 mA (min) (VCC = 1.8 V)
• 3.6-V tolerant inputs.
• 3.6-V power down protection output.
• TC74VCX00FT equivalent.
Marking
Product name
TC7SA00F
TC7SA00FU
(SMV)
V1
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
(USV)
: 0.016 g (typ.)
: 0.006 g (typ.)
Characteristics
Symbol
Rating
Pin Assignment (top view)
Unit
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
Power dissipation
DC VCC/ground current
Storage temperature range
VCC
VIN
VOUT
IIK
IOK
IOUT
PD
ICC
Tstg
−0.5 to 4.6
V
−0.5 to 4.6
V
−0.5 to 4.6 (Note 1)
−0.5 to VCC+0.5 (Note 2)
−50
V
mA
−50 (Note 3) mA
±50 mA
200 mW
±100
mA
−65 to 150
°C
IN B 1
IN A 2
GND 3
5 VCC
4 OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND
1 2009-07-29
1 page TC7SA00F/FU
Dynamic Switching Characteristics (Ta = 25°C, input: tr = tf = 2.0 ns, CL = 30 pF)
Characteristics
Symbol
Test Condition
Quiet output maximum dynamic VOL
VOLP
Quiet output minimum dynamic VOL
VOLV
Quiet output minimum dynamic VOH
VOHV
Note 11: Parameter guaranteed by design.
VIN = 1.8 V, VIL = 0 V
VIN = 2.5 V, VIL = 0 V
VIN = 3.3 V, VIL = 0 V
VIN = 1.8 V, VIL = 0 V
VIN = 2.5 V, VIL = 0 V
VIN = 3.3 V, VIL = 0 V
VIN = 1.8 V, VIL = 0 V
VIN = 2.5 V, VIL = 0 V
VIN = 3.3 V, VIL = 0 V
(Note 11)
VCC (V)
1.8
Typ.
0.25
(Note 11) 2.5
0.6
(Note 11) 3.3
0.8
(Note 11) 1.8 −0.25
(Note 11) 2.5 −0.6
(Note 11) 3.3 −0.8
(Note 11) 1.8
1.5
(Note 11) 2.5
1.9
(Note 11) 3.3
2.2
Unit
V
V
V
Capacitive Characteristics (Ta = 25°C)
Characteristics
Input capacitance
Power dissipation capacitance
Symbol
Test Condition
CIN
CPD
fIN = 10 MHz
⎯
VCC (V)
Typ. Unit
1.8, 2.5, 3.3
6
pF
(Note 12) 1.8, 2.5, 3.3 20
pF
Note 12: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation.
ICC (opr) = CPD・VCC・fIN + ICC
5 2009-07-29
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TC7SA00F.PDF ] |
Número de pieza | Descripción | Fabricantes |
TC7SA00F | 2-Input NAND Gate | Toshiba |
TC7SA00FU | 2-Input NAND Gate | Toshiba |
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